Hydrogen Adsorption and Diffusion on the Anatase TiO2(101) Surface: A First-Principles Investigation

2011 ◽  
Vol 115 (14) ◽  
pp. 6809-6814 ◽  
Author(s):  
Mazharul M. Islam ◽  
Monica Calatayud ◽  
Gianfranco Pacchioni
2018 ◽  
Vol 8 (12) ◽  
pp. 2466 ◽  
Author(s):  
Yang Wu ◽  
Zhongmin Wang ◽  
Dianhui Wang ◽  
Jiayao Qin ◽  
Zhenzhen Wan ◽  
...  

To investigate Mo doping effects on the hydrogen permeation performance of Nb membranes, we study the most likely process of atomic hydrogen adsorption and diffusion on/into Mo-doped Nb (100) surface/subsurface (in the Nb12Mo4 case) via first-principles calculations. Our results reveal that the (100) surface is the most stable Mo-doped Nb surface with the smallest surface energy (2.75 J/m2). Hollow sites (HSs) in the Mo-doped Nb (100) surface are H-adsorption-favorable mainly due to their large adsorption energy (−4.27 eV), and the H-diffusion path should preferentially be HS→TIS (tetrahedral interstitial site) over HS→OIS (octahedral interstitial site) because of the correspondingly lower H-diffusion energy barrier. With respect to a pure Nb (100) surface, the Mo-doped Nb (100) surface has a smaller energy barrier along the HS→TIS pathway (0.31 eV).


1988 ◽  
Vol 141 ◽  
Author(s):  
James R. Chelikowsky-al ◽  
M.-Y. Chou

AbstractHydrogen adsorption and diffusion on the (0001) surface of ruthenium is investigated using ab initio pseudopotentials within the local density approximation. The adsorption energies at a number of different sites and bond lengths were investigated via total energy calculations. Using these calculated values a potential surface was constructed and an estimate for the activation barrier for hydrogen diffusion was obtained. The calculated value of 4.0 kcal is in good accord with the value of ≈ 4 kcal as determined from laser-induced thermal desorption experiments.


2017 ◽  
Vol 425 ◽  
pp. 148-155 ◽  
Author(s):  
Ziying Zhang ◽  
Jiarui Jin ◽  
Huizhen Zhang ◽  
Xiaoxiao Qi ◽  
Yang Bian ◽  
...  

2014 ◽  
Vol 44 ◽  
pp. 64-72 ◽  
Author(s):  
Juan Li ◽  
Yao-Ping Xie ◽  
Ye-Xin Chen ◽  
Bao-wu Wang ◽  
Shi-Jin Zhao

2012 ◽  
Vol 37 (19) ◽  
pp. 14323-14328 ◽  
Author(s):  
Eugene Wai Keong Koh ◽  
Cheng Hsin Chiu ◽  
Yao Kun Lim ◽  
Yong-Wei Zhang ◽  
Hui Pan

2018 ◽  
Author(s):  
Suresh Natarajan ◽  
Cara-Lena Nies ◽  
Michael Nolan

<div>As the critical dimensions of transistors continue to be scaled down to facilitate improved performance and device speeds, new ultrathin materials that combine diffusion barrier and seed/liner properties are needed for copper interconnects at these length scales. Ideally, to facilitate coating of high aspect ratio structures, this alternative barrier+liner material should only consist of one or as few layers as possible. We studied TaN, the current industry standard for Cu diffusion barriers, and Ru, which is a</div><div>suitable liner material for Cu electroplating, to explore how combining these two materials in a barrier+liner material influences the adsorption of Cu atoms in the early stage of Cu film growth. To this end, we carried out first-principles simulations of the adsorption and diffusion of Cu adatoms at Ru-passivated and Ru-doped e-TaN(1 1 0) surfaces. For comparison, we also studied the behaviour of Cu and Ru adatoms at the low index surfaces of e-TaN, as well as the interaction of Cu adatoms with the (0 0 1) surface of hexagonal Ru. Our results confirm the barrier and liner properties of TaN and Ru, respectively while also highlighting the weaknesses of both materials. Ru passivated TaN was found to have improved binding with Cu adatoms as compared to the bare TaN and Ru surfaces.</div><div>On the other hand, the energetic barrier for Cu diffusion at Ru passivated TaN surface was lower than at the bare TaN surface which can promote Cu agglomeration. For Ru-doped TaN however, a decrease in Cu binding energy was found in addition to favourable migration of the Cu adatoms toward the doped Ru atom and unfavourable migration away from it or into the bulk. This suggests that Ru doping sites in the TaN surface can act as nucleation points for Cu growth with high migration barrier preventing agglomeration and allow electroplating of Cu. Therefore Ru-doped TaN is proposed as a candidate for a combined barrier+liner material with reduced thickness.</div>


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