Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode

2010 ◽  
Vol 114 (36) ◽  
pp. 15499-15503 ◽  
Author(s):  
Zhen Guo ◽  
Dongxu Zhao ◽  
Yichun Liu ◽  
Dezhen Shen ◽  
Bin Yao ◽  
...  
2007 ◽  
Vol 15 (10) ◽  
pp. 5966 ◽  
Author(s):  
Lin Zhu ◽  
Philip Chak ◽  
Joyce K. S. Poon ◽  
Guy A. DeRose ◽  
Amnon Yariv ◽  
...  

2013 ◽  
Author(s):  
Thomas Schwarz ◽  
Michael Berens ◽  
Stephan Gronenborn ◽  
Johanna Kolb ◽  
Peter Loosen ◽  
...  

2010 ◽  
Vol 97 (22) ◽  
pp. 221915 ◽  
Author(s):  
J. Zhang ◽  
A. A. Lutich ◽  
A. S. Susha ◽  
A. L. Rogach ◽  
F. Jäckel ◽  
...  

2017 ◽  
Vol 4 (2) ◽  
pp. 196-209 ◽  
Author(s):  
Ying Yu ◽  
Guo-Wei Zha ◽  
Xiang-Jun Shang ◽  
Shuang Yang ◽  
Ban-Quan Sun ◽  
...  

Abstract In this chapter, we discuss the epitaxial growth of self-assembled quantum dots (QDs) in GaAs nanowires (NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/AlGaAs core–shell NWs, branched GaAs NWs and tailored nanostructured morphologies on the NW facets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NW facet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single AlGaAs quantum ring (QR) on the NW facet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical fibers to achieve all-fiber-output single-photon sources for potential application in quantum integrated networks.


2007 ◽  
Vol 90 (26) ◽  
pp. 261116 ◽  
Author(s):  
Lin Zhu ◽  
Xiankai Sun ◽  
Guy A. DeRose ◽  
Axel Scherer ◽  
Amnon Yariv

2008 ◽  
Vol 1076 ◽  
Author(s):  
Manijeh Razeghi ◽  
Yanbo Bai ◽  
Steven Slivken ◽  
Wei Zhang

ABSTRACTIn parallel with the effort to improve the efficiency of Quantum cascade lasers (QCL) for high power continuous wave (CW) operations, the peak power in pulsed mode operation can be easily scaled up with larger emitting volumes, i.e., processing QCLs into broad area lasers. However, as the emitter width increases, multi-mode operation happens due to poorer lateral mode distinguishability. By putting a two dimensional photonic crystal distributed feedback (PCDFB) layer evanescently coupled to the main optical mode, both longitudinal and lateral beam coherence can be greatly enhanced, which makes single mode operation possible for broad area devices. For PCDFB laser performance, the linewidth enhancement factor (LEF) plays an important role in controlling the optical coherence. Being intersubband devices, QCLs have an intrinsically small LEF, thus serves better candidates over interband lasers for PCDFB applications. We demonstrate electrically pumped, room temperature, single mode operation of photonic crystal distributed feedback quantum cascade lasers emitting at λ ∼ 4.75 μm. Ridge waveguides of 50 μm and 100 μm width were fabricated with both PCDFB and Fabry-Perot feedback mechanisms. The Fabry-Perot device has a broad emitting spectrum and a broad far-field character. The PCDFB devices have primarily a single spectral mode and a diffraction limited far field characteristic with a full angular width at half-maximum of 4.8 degrees and 2.4 degrees for the 50 μm and 100 μm ridge widths, respectively.


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