On the Role of Metal Step-Edges in Graphene Growth

2010 ◽  
Vol 114 (25) ◽  
pp. 11221-11227 ◽  
Author(s):  
Souheil Saadi ◽  
Frank Abild-Pedersen ◽  
Stig Helveg ◽  
Jens Sehested ◽  
Berit Hinnemann ◽  
...  
Keyword(s):  
2018 ◽  
Vol 667 ◽  
pp. 17-24 ◽  
Author(s):  
Thorsten Wagner ◽  
Daniel Roman Fritz ◽  
Zdena Rudolfová ◽  
Peter Zeppenfeld

2007 ◽  
Vol 75 (20) ◽  
Author(s):  
A. Varykhalov ◽  
O. Rader ◽  
V. K. Adamchuk ◽  
W. Gudat ◽  
B. E. Koel ◽  
...  
Keyword(s):  

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2150
Author(s):  
Maryam A. Saeed ◽  
Ian A. Kinloch ◽  
Brian Derby

The chemical vapor deposition (CVD) of graphene on liquid substrates produces high quality graphene films due to the defect-free and atomically flat surfaces of the liquids. Through the detailed study of graphene growth on liquid Sn using atmospheric pressure CVD (APCVD), the quality of graphene has been found to have a close relationship with hydrogen flow rate that reflects on hydrogen partial pressure inside the reactor (PH2) and hydrogen solubility of the growth substrates. The role of PH2 was found to be crucial, with a low defect density monolayer graphene being obtained in low PH2 (90.4 mbar), while partial graphene coverage occurred at high PH2 (137.3 mbar). To further understand the role of substrate’s composition, binary alloy with compositions of 20, 30, 50, 60 and 80 wt.% tin in copper were made by arc-melting. Graphene quality was found to decrease with increasing the content of copper in the Cu–Sn alloys when grown using the conditions optimised for Sn substrates and this was related to the change in hydrogen solubility and the high catalytic activity of Cu compared to Sn. This shall provide a tool to help optimising CVD conditions for graphene growth based on the properties of the used catalytic substrate.


2014 ◽  
Vol 613 ◽  
pp. 64-69 ◽  
Author(s):  
Liang Li ◽  
Na Cai ◽  
Wissam A. Saidi ◽  
Guangwen Zhou

Small ◽  
2012 ◽  
Vol 8 (14) ◽  
pp. 2250-2257 ◽  
Author(s):  
Peter Sutter ◽  
Cristian V. Ciobanu ◽  
Eli Sutter

1992 ◽  
Vol 263 ◽  
Author(s):  
D. E. Jesson ◽  
S. J. Pennycook ◽  
J.-M. Baribeau ◽  
D. C. Houghton

ABSTRACTAn important role of type SB step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth.


2013 ◽  
Vol 52 (8S) ◽  
pp. 08JE02 ◽  
Author(s):  
Henryk Turski ◽  
Marcin Siekacz ◽  
Marta Sawicka ◽  
Zbig R. Wasilewski ◽  
Sylwester Porowski ◽  
...  

2010 ◽  
Vol 81 (12) ◽  
Author(s):  
Željko Šljivančanin ◽  
Bjørk Hammer
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