Organophosphonate Self-Assembled Monolayers for Gate Dielectric Surface Modification of Pentacene-Based Organic Thin-Film Transistors:  A Comparative Study†

2007 ◽  
Vol 111 (49) ◽  
pp. 12333-12338 ◽  
Author(s):  
Joseph E. McDermott ◽  
Matthew McDowell ◽  
Ian G. Hill ◽  
Jaehyung Hwang ◽  
Antoine Kahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Assembled Monolayers

Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors

2017 ◽  
Vol 19 (23) ◽  
pp. 15521-15529 ◽  
Author(s):  
Sohee Kim ◽  
Taewook Ha ◽  
Sungmi Yoo ◽  
Jae-Won Ka ◽  
Jinsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Assembled Monolayers

We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST).

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