Toward the In Situ Remediation of Carbon Deposition on Ru-Capped Multilayer Mirrors Intended for EUV Lithography:  Exploiting the Electron-Induced Chemistry

2007 ◽  
Vol 111 (33) ◽  
pp. 12165-12168 ◽  
Author(s):  
David J. Davis ◽  
Georgios Kyriakou ◽  
Robert B. Grant ◽  
Mintcho S. Tikhov ◽  
Richard M. Lambert
Keyword(s):  
Carbon Deposition ◽  
In Situ Remediation ◽  
Multilayer Mirrors ◽  
Euv Lithography

Development of Simulators for In Situ Remediation Evaluation, Design, and Operation

2001 ◽  
Author(s):  
Mark S. Dortch ◽  
Christian J. McGrath ◽  
John J. Nitao ◽  
Mark A. Widdowson ◽  
Steve Yabusaki
Keyword(s):  
In Situ Remediation ◽  
Evaluation Design

In Situ Remediation of Explosives Contaminated Ground-Water with Sequential Reactive Treatment Zones

2001 ◽  
Author(s):  
Paul G. Tratnyek ◽  
Richard L. Johnson ◽  
Timothy L. Johnson ◽  
Rosemarie Miehr
Keyword(s):  
Ground Water ◽  
In Situ Remediation

Cadmium and arsenic accumulation during the rice growth period under in situ remediation

2019 ◽  
Vol 171 ◽  
pp. 451-459 ◽  
Author(s):  
Jiao-feng Gu ◽  
Hang Zhou ◽  
Hui-ling Tang ◽  
Wen-tao Yang ◽  
Min Zeng ◽  
...  
Keyword(s):  
Growth Period ◽  
In Situ Remediation ◽  
Rice Growth ◽  
Arsenic Accumulation

Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition

1998 ◽  
Vol 533 ◽  
Author(s):  
O. Leifeld ◽  
D. Grützmacher ◽  
B. Müller ◽  
K. Kern
Keyword(s):  
Surface Roughness ◽  
Critical Thickness ◽  
Carbon Deposition ◽  
Compressive Strain ◽  
Second Step ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Island Nucleation ◽  
Facet Formation

AbstractThe morphology of Si(001) after carbon deposition of 0.05 to 0.11 monolayers (ML) was investigated in situ by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The carbon induces a c(4×4)-reconstruction of the surface. In addition, carbon increases the surface roughness compared to clean Si(001) (2×1). In a second step, the influence of the carbon induced restructuring on Ge-island nucleation was investigated. The 3D-growth sets in at considerably lower Ge coverage compared to the clean Si(001) (2×1) surface. This leads to a high density of small though irregularly shaped dots, consisting of stepped terraces, already at 2.5 ML Ge. Increasing the Ge-coverage beyond the critical thickness for facet formation, the dots show { 105 }- facets well known from Ge-clusters on bare Si(001) (2×1). However, they are flat on top with a (001)-facet showing the typical buckled Ge rows and missing dimers. This indicates that the compressive strain is not fully relaxed in these hut clusters.

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