In Situ Infrared Study of the Adsorption and Surface Acid−Base Properties of the Anions of Dicarboxylic Acids at Gold Single Crystal and Thin-Film Electrodes

2007 ◽  
Vol 111 (27) ◽  
pp. 9943-9952 ◽  
Author(s):  
José Manuel Delgado ◽  
Antonio Berná ◽  
José Manuel Orts ◽  
Antonio Rodes ◽  
Juan Miguel Feliu
Langmuir ◽  
2006 ◽  
Vol 22 (17) ◽  
pp. 7192-7202 ◽  
Author(s):  
Antonio Berná ◽  
José Manuel Delgado ◽  
José Manuel Orts ◽  
Antonio Rodes ◽  
Juan Miguel Feliu

2020 ◽  
Vol 55 (27) ◽  
pp. 12897-12905
Author(s):  
Leonardo Lari ◽  
Stephan Steinhauer ◽  
Vlado K. Lazarov

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
N. M. Vu ◽  
X. Luo ◽  
S. Novakov ◽  
W. Jin ◽  
J. Nordlander ◽  
...  

Abstract The manipulation of antiferromagnetic order in magnetoelectric Cr2O3 using electric field has been of great interest due to its potential in low-power electronics. The substantial leakage and low dielectric breakdown observed in twinned Cr2O3 thin films, however, hinders its development in energy efficient spintronics. To compensate, large film thicknesses (250 nm or greater) have been employed at the expense of device scalability. Recently, epitaxial V2O3 thin film electrodes have been used to eliminate twin boundaries and significantly reduce the leakage of 300 nm thick single crystal films. Here we report the electrical endurance and magnetic properties of thin (less than 100 nm) single crystal Cr2O3 films on epitaxial V2O3 buffered Al2O3 (0001) single crystal substrates. The growth of Cr2O3 on isostructural V2O3 thin film electrodes helps eliminate the existence of twin domains in Cr2O3 films, therefore significantly reducing leakage current and increasing dielectric breakdown. 60 nm thick Cr2O3 films show bulk-like resistivity (~ 1012 Ω cm) with a breakdown voltage in the range of 150–300 MV/m. Exchange bias measurements of 30 nm thick Cr2O3 display a blocking temperature of ~ 285 K while room temperature optical second harmonic generation measurements possess the symmetry consistent with bulk magnetic order.


2015 ◽  
Vol 17 (44) ◽  
pp. 29637-29646 ◽  
Author(s):  
Ying Zhang ◽  
Stephan Kupfer ◽  
Linda Zedler ◽  
Julian Schindler ◽  
Thomas Bocklitz ◽  
...  

A pronounced wavelength dependence of charge transfer character is observed, indicating that these 4H-imidazole-ruthenium complexes are potential multi-photoelectron donors.


1992 ◽  
Vol 275 ◽  
Author(s):  
M. Powers ◽  
R. Gronsky ◽  
J. Washburn

ABSTRACTA technique is presented where Ag is initially sputter deposited on a single crystal ceramic substrate followed by in situ deposition of YBa2Cu3O7δ The resulting microstructure shows Ag islands amidst a c-axis oriented YBCO film, apparently with intimate contact between the YBCO and substrate. This morphology appears ideal for electrical contact to the {hko} surfaces of the superconductor with current carrying CuO planes in maximum contact with the Ag.


2010 ◽  
Vol 2010.8 (0) ◽  
pp. 263-264
Author(s):  
Taeko ANDO ◽  
Hidekazu Ishihara ◽  
Masahiro Nakajima ◽  
Shigeo Arai ◽  
Toshio Fukuda ◽  
...  

2002 ◽  
Vol 751 ◽  
Author(s):  
Manabu Ohkubo ◽  
Kumiko Fukai ◽  
Kohji Matsuo ◽  
Nobuyuki Iwata ◽  
Hiroshi Yamamoto

ABSTRACTThe Re oxide films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200?C in Ar atmosphere and showed the order of 10-4 Ωcm of which the value was still about 10 times as large as that of a single crystal ReO3. The temperature dependence of the resistivity revealed a metallic behavior. A superconductivity did not take place in the bilayered film of ReO3 / NdBa2Cu3O6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120K.


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