scholarly journals A Two Transition State Model for Radical−Molecule Reactions:  Applications to Isomeric Branching in the OH−Isoprene Reaction

2007 ◽  
Vol 111 (25) ◽  
pp. 5582-5592 ◽  
Author(s):  
Erin E. Greenwald ◽  
Simon W. North ◽  
Yuri Georgievskii ◽  
Stephen J. Klippenstein
Keyword(s):  
ChemInform ◽  
2010 ◽  
Vol 30 (31) ◽  
pp. no-no
Author(s):  
Tadashi Ema ◽  
Ryoichi Okada ◽  
Minoru Fukumoto ◽  
Masahito Jittani ◽  
Mikiko Ishida ◽  
...  

2005 ◽  
Vol 109 (27) ◽  
pp. 6031-6044 ◽  
Author(s):  
Erin E. Greenwald ◽  
Simon W. North ◽  
Yuri Georgievskii ◽  
Stephen J. Klippenstein
Keyword(s):  

Biochemistry ◽  
2009 ◽  
Vol 48 (48) ◽  
pp. 11390-11398 ◽  
Author(s):  
Edward C. Abresch ◽  
Xiao-Min Gong ◽  
Mark L. Paddock ◽  
Melvin Y. Okamura

2020 ◽  
Author(s):  
Steven Maley ◽  
Doo-Hyun Kwon ◽  
Nick Rollins ◽  
Johnathan Stanley ◽  
Orson Sydora ◽  
...  

The use of data science tools to provide the emergence of nontrivial chemical features for catalyst design is an important goal in catalysis science. Additionally, there is currently no general strategy for computational homogeneous, molecular catalyst design. Here we report the unique combination of an experimentally verified DFT-transition-state model with a random forest machine learning model in a campaign to design new molecular Cr phosphine imine (Cr(P,N)) catalysts for selective ethylene oligomerization, specifically to increase 1-octene selectivity. This involved the calculation of 1-hexene:1- octene transition-state selectivity for 105 (P,N) ligands and the harvesting of 14 descriptors, which were then used to build a random forest regression model. This model showed the emergence of several key design features, such as Cr–N distance, Cr–α distance, and Cr distance out of pocket, which were then used to rapidly design a new generation of Cr(P,N) catalyst ligands that are predicted to give >95% selectivity for 1-octene<br>


1988 ◽  
Vol 100 ◽  
Author(s):  
Harry A. Atwater ◽  
Carl V. Thompsonm ◽  
Henry I. Smith

ABSTRACTIon bombardment of polycrystalline Ge, Si, and Au films leads to rates of grain boundary motion that greatly exceed rates of thermally-induced motion at the same temperature and which exhibit a weak temperature dependence. The enhanced migration rate is proportional to the rate of energy deposition in nuclear collisions at or very near the grain boundary. Experimental work is reviewed, and a transition state model is presented which accounts for the observed kinetics of grain boundary migration during bombardment. This model suggests that the rate limiting step in grain boundary motion may be thermally-induced migration of a bombardment-generated defect across the boundary. Also, the ratio of atomic jumps at grain boundaries to the local collision-induced Frenkel defect generation rate is shown to be characteristic of each material, but independent of ion mass and ion flux. The model is extended to the motion of an interface between two phases, and applications to crystallization during ion bombardment are discussed.


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