Anions of Alkali Halide Salts at Surfaces of Formamide Solutions:  Concentration Depth Profiles and Surface Topography

2007 ◽  
Vol 111 (11) ◽  
pp. 4379-4387 ◽  
Author(s):  
Gunther Andersson ◽  
Harald Morgner ◽  
Lukasz Cwiklik ◽  
Pavel Jungwirth
Keyword(s):  
Surface Topography ◽  
Alkali Halide ◽  
Depth Profiles ◽  
Halide Salts ◽  
Concentration Depth Profiles

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
Debra L. Kaiser ◽  
Piotr Becla
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Infrared Detector ◽  
Vapor Phase Epitaxy ◽  
Diffusion Method ◽  
Depth Profiles ◽  
Growth Properties ◽  
Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

Concentration Depth Profiles of Microplastic Particles in River Flow and Implications for Surface Sampling

2021 ◽  
Vol 55 (9) ◽  
pp. 6032-6041
Author(s):  
Win Cowger ◽  
Andrew B. Gray ◽  
James J. Guilinger ◽  
Brandon Fong ◽  
Kryss Waldschläger
Keyword(s):  
River Flow ◽  
Surface Sampling ◽  
Depth Profiles ◽  
Concentration Depth Profiles

Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

2009 ◽  
Vol 615-617 ◽  
pp. 565-568 ◽  
Author(s):  
Alexander A. Lebedev ◽  
A.E. Belyaev ◽  
N.S. Boltovets ◽  
V.N. Ivanov ◽  
Raisa V. Konakova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Heat Resistance ◽  
Contact Structure ◽  
Schottky Barriers ◽  
Electrophysical Properties ◽  
Depth Profiles ◽  
Contact Metallization ◽  
Before And After ◽  
Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

Assessment of biofilm changes and concentration-depth profiles during arsenopyrite oxidation by Acidithiobacillus thiooxidans

2017 ◽  
Vol 24 (24) ◽  
pp. 20082-20092 ◽  
Author(s):  
Hugo Ramírez-Aldaba ◽  
Jorge Vazquez-Arenas ◽  
Fabiola S. Sosa-Rodríguez ◽  
Donato Valdez-Pérez ◽  
Estela Ruiz-Baca ◽  
...  
Keyword(s):  
Acidithiobacillus Thiooxidans ◽  
Depth Profiles ◽  
Concentration Depth Profiles

Solvation effects on the conductivity of concentrated electrolyte solutions

1976 ◽  
Vol 54 (18) ◽  
pp. 2953-2966 ◽  
Author(s):  
Douglas E. Goldsack ◽  
Raymond Franchetto ◽  
Arlene (Anttila) Franchetto
Keyword(s):  
Activity Coefficient ◽  
Alkali Halide ◽  
Infinite Dilution ◽  
Electrolyte Solutions ◽  
Molar Conductance ◽  
The Other ◽  
Solvation Number ◽  
Parameter Equation ◽  
Conductance Data ◽  
Halide Salts

The Falkenhagen–Leist–Kelbg equation for the conductivity of electrolyte solutions has been extended to include the effect of solvation on the concentration of the salt. Two equations have been derived, both of which have only two freely adjustable parameters at any temperature: Λ0 the molar conductance of the salt at infinite dilution and H0, a solvation number parameter for the salt. In one of these equations H0 is assumed to be independent of concentration. In the other, H0 is assumed to be dependent on concentration and an explicit concentration dependent formula is derived for H0. Conductance data for the alkali halide salts in the 0.5 to 10 m concentration range and 0 to 60 °C temperature range were found to be adequately reproduced by both these equations, but with the variable hydration parameter equation yielding better fits to the data. The H0 parameters from the fixed hydration parameter equation are found to be similar to those obtained from the analysis of activity coefficient and other data whereas the variable hydration parameter equation yields H0 parameters which are much larger.

Parameters for Nitrogen Diffusion in Ni, Ti, and Al Obtained from Implanted Bilayers

1992 ◽  
Vol 279 ◽  
Author(s):  
K. K. Bourdelle ◽  
D. O. Boerma
Keyword(s):  
Nuclear Reaction ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Nitride Layer ◽  
Nuclear Reaction Analysis ◽  
Nitrogen Diffusion ◽  
Depth Profiles ◽  
Solid Interface ◽  
Before And After ◽  
Concentration Depth Profiles

ABSTRACTNi foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.

Exfoliation synthesis of graphene and optimization with alkali halide salts

2020 ◽  
Vol 20 ◽  
pp. 100548 ◽  
Author(s):  
Md. Furquan Alam ◽  
Mohd. Shoeb Khan ◽  
Imran Uddin ◽  
Shahper Nazeer Khan ◽  
Irfan Ahmad
Keyword(s):  
Alkali Halide ◽  
Halide Salts

Concentration depth profiles by XPS; a new approach

1983 ◽  
Vol 129 (2-3) ◽  
pp. A243
Author(s):  
S. Tougaard ◽  
A. Ignatiev
Keyword(s):  
New Approach ◽  
Depth Profiles ◽  
Concentration Depth Profiles
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