Luminescence and Raman Spectra of Acetylacetone at Low Temperatures

2007 ◽  
Vol 111 (26) ◽  
pp. 5820-5827 ◽  
Author(s):  
Vlasta Mohaček-Grošev ◽  
Krešimir Furić ◽  
Hrvoje Ivanković
1988 ◽  
Vol 43 (9) ◽  
pp. 1151-1155 ◽  
Author(s):  
Reinhard Strauss ◽  
Ralf Steudel

Abstract Titanocene pentasulfide reacts with sulfuryl chloride under suitable conditions to give a mixture of mainly S10, S15, and S20 which can be separated by repeated crystallization and precipitation. Pure S15 is obtained as a lemon-yellow powder at low temperatures which transforms to a sticky mass at 20 °C. Solutions of S15 in CS2 are stable at 20 °C for months. Pure S15 does not decompose at 20 °C within a few hours. Raman spectra of S15 show stretching vibrations at 409-480 cm-1 and bending and torsional modes at < 270 cm-1.


2000 ◽  
Vol 31 (12) ◽  
pp. 1057-1060
Author(s):  
Angela Sanders ◽  
Marilyn Louie ◽  
A. Anderson

1992 ◽  
Vol 23 (9) ◽  
pp. 509-514 ◽  
Author(s):  
Z. X. Shen ◽  
W. F. Sherman ◽  
M. H. Kuok ◽  
S. H. Tang

1996 ◽  
Vol 455 ◽  
Author(s):  
K. L. Ngai ◽  
C. M. Roland

ABSTRACTFrom the Raman spectra and related inferences from low temperature specific heat data, Sokolov and coworkers have established that the ratio of the quasielastic and vibrational contributions at low temperatures (5∼10K) up to Tg correlates well with the degree of fragility and β of the glass-former. As pointed out by Sokolov (see his contribution in this Volume) such a correlation between the fast dynamics and structural a-relaxation at Tg(i.e., m and β) is intriguing, since at and below Tg, the α-relaxation time τα is more than twelve orders of magnitude longer than the quasielastic contribution and the boson peak. We show in this paper how the Coupling Model (CM) may provide an explanation for this correlation.


2015 ◽  
Vol 29 (27) ◽  
pp. 1550189
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen

In this paper, we report a large enhancement in the thermoelectric power factor in CrSi2 film via Si:B (1 at.% B content) addition. The Si:B-enriched CrSi2 films are prepared by co-sputtering CrSi2 and heavily B-doped Si targets. Both X-ray diffraction patterns and Raman spectra confirm the formation of the crystalline phase CrSi2. Raman spectra also indicate the crystallization of the added Si:B. With the addition of Si:B, the electrical resistivity [Formula: see text] decreases especially at low temperatures while the Seebeck coefficient [Formula: see text] increases above 533 K. As a result, the thermoelectric power factor, [Formula: see text], is greatly enhanced and can reach [Formula: see text] at 583 K, which is much larger than that of the pure CrSi2 film.


1997 ◽  
Vol 484 ◽  
Author(s):  
Spirit Tlali ◽  
Howard E. Jackson ◽  
M. C. Ohmer ◽  
P. G. Schunemann ◽  
T. M. Pollak

AbstractRaman scattering experiments on high quality ZnGeP2 single crystals grown by the seeded horizontal dynamic gradient technique have been carried out. Polarized Raman spectra were obtained in the backscattering geometry at both room and low temperatures for several crystal orientations and compared with group theoretical predictions. Raman spectra from as-grown and annealed samples display distinctive differences which were explored by utilizing two different excitation wavelengths: 514.3 nm and 632.8 nm; the observed differences are attributed to a surface interdiffuasion effect.


Sign in / Sign up

Export Citation Format

Share Document