Estimation of the Activation Energy in the Belousov−Zhabotinsky Reaction by Temperature Effect on Excitable Waves

2007 ◽  
Vol 111 (6) ◽  
pp. 1052-1056 ◽  
Author(s):  
Jinzhong Zhang ◽  
Luqun Zhou ◽  
Qi Ouyang
Keyword(s):  
Activation Energy ◽  
Temperature Effect ◽  
Belousov Zhabotinsky Reaction

scholarly journals Fungal Cellulases XI. The Nature of the Inductive Process for Aryl ?-Glucosidase in Stachybotrys Atra

1965 ◽  
Vol 18 (2) ◽  
pp. 387 ◽  
Author(s):  
MAJ Ermyn
Keyword(s):  
Activation Energy ◽  
Temperature Effect ◽  
Inductive Effect ◽  
Growth Period ◽  
Cellular Protein ◽  
Kcal Mole ◽  
Growth Respiration ◽  
History Of ◽  
Lag Period ◽  
Stachybotrys Atra

The properties of the inductive process for the aryl F/.glucosidase of S. atra are described. The induction appears to be independent of growth, respiration, and the uptake of measurable quantities of inducer into the cell. There is a lag period in the induction, the length of which depends on the physiological history of the mould and the temperature of induction; the temperature effect appears to be governed by a process with activation energy of 16 kcal/mole. The amount of inducible enzyme for a given sample of the mould appears to be equal to that which would have eventually been produced "constitutively" at the end of the growth period. The induction is inhibited competitively by monoses; this effect is reversed competitively by 3�0-methyl glucose. 3-0-Methyl glucose has a con-siderable inducer activity in its own right, and also stimulates the inductive effect due to thioglucoside. The only other inhibitors found are streptomycin and S-aminoethyl-L-cysteine. The effect of the latter is reversed by DL-lysine. No other substance known or expected to have an effect on cellular protein-synthesizing systems inhibited the induction.

Activation Energy of the Belousov–Zhabotinsky Reaction in a Gel with [Fe(bpy)3] Catalyst

2014 ◽  
Vol 43 (5) ◽  
pp. 673-675 ◽  
Author(s):  
Yusuke Hara ◽  
Hiroyuki Mayama ◽  
Yoshinori Yamaguchi ◽  
Kenji Fujimoto
Keyword(s):  
Activation Energy ◽  
Belousov Zhabotinsky Reaction

scholarly journals Substrate Temperature Effect on the Spectrum Emission in Superconductor Heterostructure BiPbSrCaCuZnO

2020 ◽  
Vol 31 (3) ◽  
pp. 110
Author(s):  
Suzan Malek Shakouli
Keyword(s):  
Activation Energy ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Applied Voltage ◽  
Visible Spectrum ◽  
Substrate Temperatures ◽  
Zno Semiconductor ◽  
Minority Carriers ◽  
Substrate Sample

This paper shows the applied voltage effect on the superconductor substrate sample. The substrate temperature (Ts) increases the activation energy of the substrate atoms. Thus, the injecting of minority carriers (holes) increased in ZnO semiconductor. These carriers recombine with electrons of 4S1 shell for Cu atom. The recombination occurs by two ways from band to band (direct recombination) or via traps (indirect recombination). The recombination mechanisms produce photons emission in the ultraviolet and visible spectrum. The calibration between voltage and temperature achieved using Variac device. The applied voltages were 60, 65, 70, and 80 Volt, and the recorded substrate temperatures were 300, 320, 350, and 400 °C, respectively.

Influence of the Temperature on the Diffusion Coefficient Value during the Cobalt Electrodeposition on Different Substrates

2014 ◽  
Vol 976 ◽  
pp. 144-147
Author(s):  
Nancy Ramos Lora ◽  
Luis Humberto Mendoza Huizar ◽  
Clara Hilda-Rios-Reyes ◽  
Carlos Andrés Galán-Vidal
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Temperature Effect ◽  
Glassy Carbon ◽  
Arrhenius Equation ◽  
Voltammetric Techniques ◽  
Different Temperatures ◽  
Cobalt Electrodeposition

Cobalt electrodeposition on palladium and glassy carbon was studied at different temperatures by using voltammetric techniques. Temperature effect on the diffusion coefficient value was analyzed. The results clearly showed that cobalt electrodeposition is a diffusioncontrolled process. The temperature effect on the values of the diffusion coefficient was analyzed through the Arrhenius equation. The value of the activation energy was calculated as 21.56 kJ mol-1and 25.73 kJ mol1for palladium and glassy carbon respectively.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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