Ferromagnetic and Electrical Characteristics of in Situ Manganese-Doped GaN Nanowires

2006 ◽  
Vol 111 (3) ◽  
pp. 1180-1185 ◽  
Author(s):  
Congkang Xu ◽  
Junghwan Chun ◽  
Hyo Jin Lee ◽  
Yoon Hee Jeong ◽  
Seong-Eok Han ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Gan Nanowires

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation

Nano Letters ◽  
2011 ◽  
Vol 11 (2) ◽  
pp. 548-555 ◽  
Author(s):  
Rodrigo A. Bernal ◽  
Ravi Agrawal ◽  
Bei Peng ◽  
Kristine A. Bertness ◽  
Norman A. Sanford ◽  
...  
Keyword(s):  
In Situ Tem ◽  
Atomistic Modeling ◽  
Growth Orientation ◽  
Gan Nanowires

scholarly journals The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5887
Author(s):  
Linlin Shi ◽  
Hong Wang ◽  
Xiaohui Ma ◽  
Yunpeng Wang ◽  
Fei Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Luminescent Properties ◽  
Tunneling Effect ◽  
Light Sources ◽  
Electrical Characteristics ◽  
Fundamental Research ◽  
Induced Defects ◽  
Theoretical Simulations ◽  
Bright Emission

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn

2018 ◽  
Vol 57 (10) ◽  
pp. 106504
Author(s):  
Yongwang Zhang ◽  
Jun Zheng ◽  
Zhi Liu ◽  
Chunlai Xue ◽  
Chuanbo Li ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electrical Characteristics

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

CrystEngComm ◽  
2018 ◽  
Vol 20 (23) ◽  
pp. 3202-3206 ◽  
Author(s):  
Pierre Corfdir ◽  
Gabriele Calabrese ◽  
Apurba Laha ◽  
Thomas Auzelle ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Relevant Information ◽  
Area Fraction ◽  
Gan Nanowires ◽  
Covered Area ◽  
Optical Reflectometry

Accessing in situ relevant information on the fluctuations in length and covered area fraction at the μm scale of vertical nanowire ensembles by polarization resolved optical reflectometry.

Doping and electrical characteristics of in-situ heavily B-doped Si1−x−yGexCy films epitaxially grown using ultraclean LPCVD

2000 ◽  
Vol 380 (1-2) ◽  
pp. 57-60 ◽  
Author(s):  
Takaaki Noda ◽  
Doohwan Lee ◽  
Hyunyoung Shim ◽  
Masao Sakuraba ◽  
Takashi Matsuura ◽  
...  
Keyword(s):  
Electrical Characteristics

Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

2014 ◽  
Vol 61 (8) ◽  
pp. 2774-2778 ◽  
Author(s):  
Quang Ho Luc ◽  
Edward Yi Chang ◽  
Hai Dang Trinh ◽  
Yueh Chin Lin ◽  
Hong Quan Nguyen ◽  
...  
Keyword(s):  
Passivation Layer ◽  
Electrical Characteristics
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