Synchrotron-Induced Photoelectron Spectroscopy of the Dye-Sensitized Nanocrystalline TiO2/Electrolyte Interface:  Band Gap States and Their Interaction with Dye and Solvent Molecules

2007 ◽  
Vol 111 (2) ◽  
pp. 849-854 ◽  
Author(s):  
Konrad Schwanitz ◽  
Ulrich Weiler ◽  
Ralf Hunger ◽  
Thomas Mayer ◽  
Wolfram Jaegermann
Keyword(s):  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Nanocrystalline Tio2 ◽  
Dye Sensitized ◽  
Electrolyte Interface ◽  
Solvent Molecules ◽  
Gap States

scholarly journals Electronic, Structural, and Optical Structure of Mono-Doped and Co-Doped (210) TiO2 Brookite Surfaces for Application in Dye-Sensitized Solar Cells—A First Principles Study

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3918
Author(s):  
Ratshilumela S. Dima ◽  
Lutendo Phuthu ◽  
Nnditshedzeni E. Maluta ◽  
Joseph K. Kirui ◽  
Rapela R. Maphanga
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Dye Sensitized Solar Cells ◽  
Visible Region ◽  
Electromagnetic Spectrum ◽  
Doped Tio2 ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
Co Doped ◽  
Optical Structure

Titanium dioxide (TiO2) polymorphs have recently gained a lot of attention in dye-sensitized solar cells (DSSCs). The brookite polymorph, among other TiO2 polymorphs, is now becoming the focus of research in DSSC applications, despite the difficulties in obtaining it as a pure phase experimentally. The current theoretical study used different nonmetals (C, S and N) and (C-S, C-N and S-N) as dopants and co-dopants, respectively, to investigate the effects of mono-doping and co-doping on the electronic, structural, and optical structure properties of (210) TiO2 brookite surfaces, which is the most exposed surface of brookite. The results show that due to the narrowing of the band gap and the presence of impurity levels in the band gap, all mono-doped and co-doped TiO2 brookite (210) surfaces exhibit some redshift. In particular, the C-doped, and C-N co-doped TiO2 brookite (210) surfaces exhibit better absorption in the visible region of the electromagnetic spectrum in comparison to the pure, S-doped, N-doped, C-S co-doped and N-S co-doped TiO2 brookite (210) surfaces.

scholarly journals High efficiency dye-sensitized solar cells with VOC–JSC trade off eradication by interfacial engineering of the photoanode|electrolyte interface

RSC Advances ◽  
2019 ◽  
Vol 9 (69) ◽  
pp. 40292-40300
Author(s):  
Anantharaj Gopalraman ◽  
Subbian Karuppuchamy ◽  
Saranyan Vijayaraghavan
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
High Efficiency ◽  
Dye Sensitized Solar Cells ◽  
Surface States ◽  
Trade Off ◽  
Interfacial Engineering ◽  
Dye Sensitized ◽  
Electrolyte Interface ◽  
Sensitized Solar Cells

VOC–JSC trade off is eliminated. Newly created surface states by OA in TiO2 facilitated the charge transfer kinetics.

Improved performance of dye-sensitized solar cells by employing acid treated Ti layer on the nanocrystalline TiO2

2014 ◽  
Vol 554 ◽  
pp. 204-208 ◽  
Author(s):  
Songyi Park ◽  
Min-Kyu Son ◽  
Soo-Kyoung Kim ◽  
Na-Yeong Hong ◽  
Jeong-Yun Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Nanocrystalline Tio2 ◽  
Dye Sensitized ◽  
Improved Performance ◽  
Sensitized Solar Cells

CdTe Thin Film Solar Cells: The CdS/SnO2 Front Contact

2001 ◽  
Vol 668 ◽  
Author(s):  
J. Fritsche ◽  
S. Gunst ◽  
A. Thiβen ◽  
R. Gegenwart ◽  
A. Klein ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Tin Dioxide ◽  
Surface Preparation ◽  
Thin Film Solar Cells ◽  
Subsequent Formation ◽  
Coated Glass ◽  
Preparation Conditions

ABSTRACTTin dioxide (SnO2) coated glass is the commonly used substrate for thin film solar cells based on CdTe absorbers. We have investigated the properties of the CdS/SnO2 interface by X-ray and ultraviolet photoelectron spectroscopy. SnO2 coated glass substrates as used for solar cell preparation were cleaned by different procedures such as derinsing, sputtering, heating and annealing in oxygen atmosphere. Different surface properties with a strongly dependent number of defects in the SnO2 band gap are identified. CdS films were deposited stepwise by thermal evaporation to determine the electronic interface properties for different surface preparation conditions. Comparative barrier heights at the CdSSnO2 contact are found for most surface pretreatments. The Fermi level position in these cases is situated in the SnO2 band gap. A different interface behaviour is determined for sputter cleaned SnO2 surfaces, which is attributed to the formation of oxygen vacancies during sputtering and subsequent formation of an interfacial SnOxSy compound.

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