High-Density, Aligned SiO2Nanowire Arrays:  Microscopic Imaging of the Unique Growth Style and Their Ultraviolet Light Emission Properties

2006 ◽  
Vol 110 (32) ◽  
pp. 15724-15728 ◽  
Author(s):  
Zhidong Xiao ◽  
Lide Zhang ◽  
Guowen Meng ◽  
Xike Tian ◽  
Haibo Zeng ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emission ◽  
High Density ◽  
Microscopic Imaging ◽  
Emission Properties

Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells

2014 ◽  
Vol 105 (5) ◽  
pp. 053104 ◽  
Author(s):  
Ryan G. Banal ◽  
Yoshitaka Taniyasu ◽  
Hideki Yamamoto
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Emission Properties ◽  
Deep Ultraviolet

Ultraviolet light emission properties of ZnO single crystals

1998 ◽  
pp. 61-64 ◽  
Author(s):  
N. Ohashi ◽  
T. Sekiguchi ◽  
H. Haneda ◽  
Y. Terada ◽  
T. Ohgaki ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Emission Properties

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

2002 ◽  
Vol 81 (22) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Taniguchi ◽  
K. Watanabe ◽  
S. Koizumi ◽  
I. Sakaguchi ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Cubic Boron Nitride ◽  
Self Organized ◽  
Bulk Single Crystals

scholarly journals Observation of extreme ultraviolet light emission from an expanding plasma jet with multiply charged argon or xenon ions

2018 ◽  
Vol 113 (15) ◽  
pp. 153502 ◽  
Author(s):  
A. G. Shalashov ◽  
A. V. Vodopyanov ◽  
I. S. Abramov ◽  
A. V. Sidorov ◽  
E. D. Gospodchikov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emission ◽  
Extreme Ultraviolet ◽  
Plasma Jet ◽  
Multiply Charged ◽  
Extreme Ultraviolet Light

Enhanced electrical performance by modulation-doping in AlGaN-based deep ultraviolet light-emitting diodes

2019 ◽  
Vol 33 (08) ◽  
pp. 1950088
Author(s):  
Sipan Yang ◽  
Miao He ◽  
Jianchang Yan ◽  
Kunhua Wen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Electrical Performance ◽  
Algan Layer ◽  
Modulation Doping ◽  
Light Emitting ◽  
Growth Method ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Through the silicon modulation-doping (MD) growth method, the electrical performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) is improved by replacing the commonly uniform-doped (UD) method of n-AlGaN layer. The electroluminescence characterisic measurements demonstrate the MD growth method could effectively enhance the light emission intensity. Both the forward voltage and reverse leakage current of the MD samples are obviously reduced compared to those of the UD sample. Due to the existence of periodic Si-MD superlattices in n-AlGaN layers, which may behave like a series of capacitors, the built-in electric fields are formed. Both the measured capacitance–voltage (C–V) characteristics, and related photoluminescence (PL) intensity with the Si-MD growth method are enhanced. In detail, the effects of these capacitors can enhance the peak internal capacitance up to 370 pF in the MD sample, whereas the UD sample is only 180 pF. The results also mean that with better current spreading ability in the MD sample, the MD processes can effectively enhance the efficiency and reliability of DUV-LEDs. Thus, the investigations of the Si-MD growth methods may be useful for improving the electrical performance of DUV-LEDs in future works. Meanwhile, this investigation may partly suggest the minor crystalline quality improvements in the epi-layers succeeding the MD n-AlGaN layer.

scholarly journals RESEARCH OF ELECTRON RESONANT TUNNELING AND LIGHT EMISSION PROPERTIES OF DOUBLE-BARRIER TUNNER JUNCTION

1999 ◽  
Vol 48 (2) ◽  
pp. 326
Author(s):  
WANG MAO-XIANG ◽  
SUN CHENG-XIU ◽  
SHI XIAO-CHUN ◽  
YU JIAN-HUA
Keyword(s):  
Resonant Tunneling ◽  
Light Emission ◽  
Double Barrier ◽  
Emission Properties

2D perovskite hybrid with both semiconductive and yellow light emission properties

2019 ◽  
Vol 102 ◽  
pp. 90-94 ◽  
Author(s):  
Ling-Yun Rong ◽  
Chao Hu ◽  
Zhong-Ning Xu ◽  
Guan-E Wang ◽  
Guo-Cong Guo
Keyword(s):  
Light Emission ◽  
Yellow Light ◽  
Emission Properties
Sign in / Sign up

Export Citation Format

Share Document