Single Crystals ofl-O-Serine Phosphate X-Irradiated at Low Temperatures:  EPR, ENDOR, EIE, and DFT Studies

2006 ◽  
Vol 110 (31) ◽  
pp. 9585-9596 ◽  
Author(s):  
Kjell Tage Øhman ◽  
Audun Sanderud ◽  
Eli Olaug Hole ◽  
Einar Sagstuen
Keyword(s):  
Single Crystals ◽  
Low Temperatures ◽  
Dft Studies ◽  
Serine Phosphate

Anthracene fluorescence at low temperatures. I. Purified single crystals

1972 ◽  
Vol 25 (7) ◽  
pp. 1411 ◽  
Author(s):  
LE Lyons ◽  
LJ Warren
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Fluorescence Spectrum ◽  
Low Temperatures ◽  
Free Exciton ◽  
Deformation Bands ◽  
Exciton Emission ◽  
Polarized Emission ◽  
Impurity Bands ◽  
Phonon Structure

The low-temperature fluorescence spectrum of purified vapour-grown anthracene single crystals is presented and the free-exciton emission distinguished from a number of defect or impurity bands present even in the purest crystals. In assigning the observed bands the symmetry of the active vibrations and the origin of background fluorescence and deformation bands are discussed. The phonon structure in the region of the fluorescence origin was found to be almost completely b-polarized. Emission of electronic origin (25103 cm-1) was too weak to be observed. Polarization ratios of the principal vibronio bands at 5.6 K are given.

Effects of ternary additions on the deformation behavior of single crystals of MoSi2

2000 ◽  
Vol 646 ◽  
Author(s):  
Haruyuki Inui ◽  
Koji Ishikawa ◽  
Masaharu Yamaguchi
Keyword(s):  
Yield Strength ◽  
Strain Rate ◽  
Single Crystals ◽  
Creep Strain ◽  
High Temperatures ◽  
Low Temperatures ◽  
Deformation Behavior ◽  
Creep Strain Rate ◽  
Compression Creep ◽  
Ternary Additions

ABSTRACTEffects of ternary additions on the deformation behavior of single crystals of MoSi2 with the hard [001] and soft [0 15 1] orientations have been investigated in compression and compression creep. The alloying elements studied include V, Cr, Nb and Al that form a C40 disilicide with Si and W and Re that form a C11b disilicide with Si. The addition of Al is found to decrease the yield strength of MoSi2 at all temperatures while the additions of V, Cr and Nb are found to decrease the yield strength at low temperatures and to increase the yield strength at high temperatures. In contrast, the additions of W and Re are found to increase the yield strength at all temperatures. The creep strain rate for the [001] orientation is significantly lower than that for the [0 15 1] orientation. The creep strain rate for both orientations is significantly improved by alloying with ternary elements such as Re and Nb.

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