Effect of an Adsorbent on Recombination and Band-Edge Movement in Dye-Sensitized TiO2Solar Cells:  Evidence for Surface Passivation

2006 ◽  
Vol 110 (25) ◽  
pp. 12485-12489 ◽  
Author(s):  
Nikos Kopidakis ◽  
Nathan R. Neale ◽  
Arthur J. Frank
Keyword(s):  
Surface Passivation ◽  
Band Edge ◽  
Dye Sensitized

scholarly journals Core Nanoparticle Engineering for Narrower and More Intense Band-Edge Emission from AgInS2/GaSx Core/Shell Quantum Dots

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1763 ◽  
Author(s):  
Watcharaporn Hoisang ◽  
Taro Uematsu ◽  
Takahisa Yamamoto ◽  
Tsukasa Torimoto ◽  
Susumu Kuwabata
Keyword(s):  
Surface Passivation ◽  
Precursor Solution ◽  
Silver Sulfide ◽  
Band Edge ◽  
Crystal Phase ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Orthorhombic Crystal ◽  
Metal Precursor ◽  
Ag2s Nanoparticles

Highly luminescent silver indium sulfide (AgInS2) nanoparticles were synthesized by dropwise injection of a sulfur precursor solution into a cationic metal precursor solution. The two-step reaction including the formation of silver sulfide (Ag2S) nanoparticles as an intermediate and their conversion to AgInS2 nanoparticles, occurred during the dropwise injection. The crystal structure of the AgInS2 nanoparticles differed according to the temperature of the metal precursor solution. Specifically, the tetragonal crystal phase was obtained at 140 °C, and the orthorhombic crystal phase was obtained at 180 °C. Furthermore, when the AgInS2 nanoparticles were coated with a gallium sulfide (GaSx) shell, the nanoparticles with both crystal phases emitted a spectrally narrow luminescence, which originated from the band-edge transition of AgInS2. Tetragonal AgInS2 exhibited narrower band-edge emission (full width at half maximum, FWHM = 32.2 nm) and higher photoluminescence (PL) quantum yield (QY) (49.2%) than those of the orthorhombic AgInS2 nanoparticles (FWHM = 37.8 nm, QY = 33.3%). Additional surface passivation by alkylphosphine resulted in higher PL QY (72.3%) with a narrow spectral shape.

Luminescence in Si/Strained Si1−xGex Heterostructures

1995 ◽  
Vol 379 ◽  
Author(s):  
J.C. Sturm ◽  
A. St. Amour ◽  
Y. Lacroix ◽  
M.L.W. Thewalt
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Surface Passivation ◽  
Band Edge ◽  
Strained Si ◽  
Edge Luminescence ◽  
Recent Developments ◽  
High Pump ◽  
Band Edge Luminescence ◽  
First Time

ABSTRACTThis paper quickly reviews the structure of band-edge luminescence in Si/strained Si1−xGex heterostructures, and then focusses on two recent developments -- the origin of “deep” sub-bandgap luminescence which is sometimes observed in structures grown by Molecular Beam Epitaxy (MBE) and the understanding of the temperature dependence of the band-edge luminescence (up to room temperature). Strong evidence will be presented that the origin of the deep luminescence is radiation damage, and that generated defects are segregated or trapped in the SilxGex layers. The modelling of the temperature dependence by twocarrier numerical simulation is presented for the first time. The work and experimental data show convincingly that the strength of the luminescence at high temperature is controlled by recombination at the top silicon surface, which in turn can be controlled by surface passivation. At high pump powers and low temperatures, Auger recombination reduces the lifetime in the Si1−xGex layers, and leads to a luminescence vs. temperature which is flat up to 250 K and which is reduced only by a factor of three at room temperature.

Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation

Nano Letters ◽  
2012 ◽  
Vol 12 (7) ◽  
pp. 3378-3384 ◽  
Author(s):  
M. H. Sun ◽  
H. J. Joyce ◽  
Q. Gao ◽  
H. H. Tan ◽  
C. Jagadish ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Surface States ◽  
Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Inas Nanowires

scholarly journals Surface Passivation of Nanoporous TiO2 via Atomic Layer Deposition of ZrO2 for Solid-State Dye-Sensitized Solar Cell Applications

2009 ◽  
Vol 113 (42) ◽  
pp. 18385-18390 ◽  
Author(s):  
Tina C. Li ◽  
Márcio S. Góes ◽  
Francisco Fabregat-Santiago ◽  
Juan Bisquert ◽  
Paulo R. Bueno ◽  
...  
Keyword(s):  
Solar Cell ◽  
Solid State ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
Layer Deposition

Surface passivation of a photonic crystal band-edge laser by atomic layer deposition of SiO2and its application for biosensing

Nanoscale ◽  
2015 ◽  
Vol 7 (8) ◽  
pp. 3565-3571 ◽  
Author(s):  
Hyungrae Cha ◽  
Jeongkug Lee ◽  
Luke R. Jordan ◽  
Si Hoon Lee ◽  
Sang-Hyun Oh ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Band Edge ◽  
Layer Deposition
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