Photogeneration and Decay of Charge Carriers in Hybrid Bulk Heterojunctions of ZnO Nanoparticles and Conjugated Polymers†

2006 ◽  
Vol 110 (21) ◽  
pp. 10315-10321 ◽  
Author(s):  
Pieter A. C. Quist ◽  
Waldo J. E. Beek ◽  
Martijn M. Wienk ◽  
René A. J. Janssen ◽  
Tom J. Savenije ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Zno Nanoparticles ◽  
Charge Carriers ◽  
Bulk Heterojunctions

Formation and Decay of Charge Carriers in Bulk Heterojunctions of MDMO-PPV or P3HT with New n-Type Conjugated Polymers

2007 ◽  
Vol 111 (11) ◽  
pp. 4452-4457 ◽  
Author(s):  
Pieter A. C. Quist ◽  
Jörgen Sweelssen ◽  
Marc M. Koetse ◽  
Tom J. Savenije ◽  
Laurens D. A. Siebbeles
Keyword(s):  
Conjugated Polymers ◽  
Charge Carriers ◽  
Bulk Heterojunctions

Reactive Scattering between Excitons and Charge Carriers in Conjugated Polymers

2014 ◽  
Vol 118 (41) ◽  
pp. 23451-23458 ◽  
Author(s):  
Wiliam Ferreira da Cunha ◽  
Luiz Antonio Ribeiro ◽  
Antonio Luciano de Almeida Fonseca ◽  
Ricardo Gargano ◽  
Geraldo Magela e Silva
Keyword(s):  
Conjugated Polymers ◽  
Charge Carriers ◽  
Reactive Scattering

Charge Carriers Motion in P3HT:Capped ZnO Nanoparticles Blend Films; Impact of Capping Agents

2016 ◽  
Vol 1 ◽  
Author(s):  
Ayi Bahtiar
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Charge Carrier ◽  
Zno Nanoparticles ◽  
High Performance ◽  
Active Material ◽  
Charge Carriers ◽  
Capping Agents ◽  
Blend Films ◽  
Carrier Recombination

<p class="TTPAbstract">Blend of conjugated polymer poly(3-hexylthiophene) or P3HT and Zinc Oxide nanoparticles (ZnO-NP) has been intensively used as active material for high performance hybrid solar cells. However, agglomeration of ZnO-NP hinders efficient charge carrier<span lang="IN">s</span> transfer both from P3HT to ZnO-NP and <span lang="IN">their </span>transport within ZnO-NP which cause to low performance of solar cells. Capping of ZnO-NP is currently applied to avoid this agglomeration effect. In this study, we used three different capping agents to cap ZnO-NP, namely small semiconducting molecules squaraine, 2-naphthalene and insulating polymer polyvinylpyrrolidone. We <span lang="IN">conducted</span> temperature dependence of photoinduced infrared absorption spectroscopy to study charge carriers motion in the P3HT:capped ZnO nanoparticles blend films. The measurement was carried out with light irradiation of 532 nm and temperature ranging from 78 to 300 K.  The spectra were analyzed by a bimolecular carrier recombination method with Arrhenius activation energy. Two parallel charge carrier recombination processes are observed, namely polarons recombination along polymer chain (intra-chain) and inter-chain polarons recombination in the P3HT-chains. At low temperatures, polarons recombine along polymer chains (intra-chain) with activation energy between 19-23 eV for all samples. However, the inter-chain polaron motion is influenced by capping agents as shown by a variation in its activation energy ranging from 28 to 58 eV.</p>

Ion implantation in conjugated polymers: Mechanisms for generation of charge carriers

1994 ◽  
Vol 69 (6) ◽  
pp. 1155-1171 ◽  
Author(s):  
A. Moliton ◽  
B. Lucas ◽  
C. Moreau ◽  
R. H. Friend ◽  
B. François
Keyword(s):  
Ion Implantation ◽  
Conjugated Polymers ◽  
Charge Carriers

scholarly journals Unravelling the origin of the giant Zn deficiency in wurtzite type ZnO nanoparticles

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Adèle Renaud ◽  
Laurent Cario ◽  
Xavier Rocquefelte ◽  
Philippe Deniard ◽  
Eric Gautron ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Charge Carriers ◽  
Zn Deficiency ◽  
Core Shell ◽  
Bulk Materials ◽  
Nitrogen Doped ◽  
The Core ◽  
Zinc Peroxide ◽  
P Type

Abstract Owing to its high technological importance for optoelectronics, zinc oxide received much attention. In particular, the role of defects on its physical properties has been extensively studied as well as their thermodynamical stability. In particular, a large concentration of Zn vacancies in ZnO bulk materials is so far considered highly unstable. Here we report that the thermal decomposition of zinc peroxide produces wurtzite-type ZnO nanoparticles with an extraordinary large amount of zinc vacancies (>15%). These Zn vacancies segregate at the surface of the nanoparticles, as confirmed by ab initio calculations, to form a pseudo core-shell structure made of a dense ZnO sphere coated by a Zn free oxo-hydroxide mono layer. In others terms, oxygen terminated surfaces are privileged over zinc-terminated surfaces for passivation reasons what accounts for the Zn off-stoichiometry observed in ultra-fine powdered samples. Such Zn-deficient Zn1-xO nanoparticles exhibit an unprecedented photoluminescence signature suggesting that the core-shell-like edifice drastically influences the electronic structure of ZnO. This nanostructuration could be at the origin of the recent stabilisation of p-type charge carriers in nitrogen-doped ZnO nanoparticles.

Effect of Trap Energy on Series Resistance of Phenosafranine Dye Based Organic Diode in Presence of TiO2 and ZnO Nanoparticles

2020 ◽  
Vol 1159 ◽  
pp. 112-123
Author(s):  
Pallab Kumar Das ◽  
Swapan Bhunia ◽  
Nabin Baran Manik
Keyword(s):  
Zno Nanoparticles ◽  
Transport Mechanism ◽  
Series Resistance ◽  
Charge Carriers ◽  
Device Performance ◽  
Charge Transport Mechanism ◽  
Trap Energy ◽  
Organic Diodes ◽  
Dc Current ◽  
Organic Diode

The series resistance (Rs) controls the device performance significantly and for organic diode, the typical value of Rs is quite high. There are not many reports on the investigation of the high value of resistance in organic diodes. In this paper, we report that the trapping of charge carriers which is an important parameter to control the charge transport mechanism in organic solids is responsible for this high value of series resistance. In this paper effect of trap energy on Rs has been studied in the presence of TiO2 and ZnO nanoparticles on Phenosafranine (PSF) dye-based organic diode. It is already reported that by incorporating nanoparticles, trap energy is reduced which in turn increases the conductivity and efficiency of the device. So it is expected that trap energy has a strong influence on Rs. In this work we have measured Rs by using the Cheung Cheung method and the trap energy is also measured by analyzing the dc current. The value of Rs is related to trap energy. The extracted values of Rs are about 250.8 KΩ, 108.0 KΩ, and 98.4 KΩ respectively for only PSF, PSF+ZnO, and PSF+TiO2. It is also been observed that by incorporating nanoparticles the trap energy is reduced. The estimated values of the trap energy are about 0.090eV, 0.078eV ,0.072eV respectively for only PSF, PSF+ZnO, and PSF+TiO2. It has been observed that lowering of trap energy by incorporating TiO2 and ZnO reduces the value of Rs.

Sign in / Sign up

Export Citation Format

Share Document