Studies of Tetracene- and Pentacene-Based Organic Thin-Film Transistors Fabricated by the Neutral Cluster Beam Deposition Method

2005 ◽  
Vol 109 (50) ◽  
pp. 23918-23924 ◽  
Author(s):  
P. Syed Abthagir ◽  
Young-Geun Ha ◽  
Eun-Ah You ◽  
Seon-Hwa Jeong ◽  
Hoon-Seok Seo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Cluster Beam ◽  
Deposition Method ◽  
Organic Thin Film ◽  
Neutral Cluster ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Air-Stable, Hysteresis-Free Organic Complementary Inverters Produced by the Neutral Cluster Beam Deposition Method

2011 ◽  
Vol 115 (23) ◽  
pp. 11763-11767 ◽  
Author(s):  
Min-Jun An ◽  
Hoon-Seok Seo ◽  
Ying Zhang ◽  
Jeong-Do Oh ◽  
Jong-Ho Choi
Keyword(s):  
Cluster Beam ◽  
Deposition Method ◽  
Neutral Cluster ◽  
Complementary Inverters ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Sign in / Sign up

Export Citation Format

Share Document