Charge Transport in Self-Organized π-Stacks ofp-Phenylene Vinylene Oligomers

2005 ◽  
Vol 109 (39) ◽  
pp. 18267-18274 ◽  
Author(s):  
Paulette Prins ◽  
Kittusamy Senthilkumar ◽  
Ferdinand C. Grozema ◽  
Pascal Jonkheijm ◽  
Albert P. H. J. Schenning ◽  
...  
2017 ◽  
Vol 3 (5) ◽  
pp. 1600519 ◽  
Author(s):  
C. Kasparek ◽  
R. Rohloff ◽  
J. J. Michels ◽  
N. I. Crăciun ◽  
J. Wildeman ◽  
...  

2004 ◽  
Vol 69 (15) ◽  
Author(s):  
H. H. P. Gommans ◽  
M. Kemerink ◽  
G. G. Andersson ◽  
R. M. T. Pijper

2014 ◽  
Vol 215 (15) ◽  
pp. 1473-1484 ◽  
Author(s):  
Getachew Adam ◽  
Teketel Yohannes ◽  
Matthew White ◽  
Alberto Montaigne ◽  
Christoph Ulbricht ◽  
...  

2005 ◽  
Vol 97 (12) ◽  
pp. 123703 ◽  
Author(s):  
C. Tanase ◽  
J. Wildeman ◽  
P. W. M. Blom ◽  
M. E. Mena Benito ◽  
D. M. de Leeuw ◽  
...  

2006 ◽  
Vol 17 (9-10) ◽  
pp. 673-678 ◽  
Author(s):  
Petr Toman ◽  
Stanislav Nešpůrek ◽  
Martin Weiter ◽  
Martin Vala ◽  
Juliusz Sworakowski ◽  
...  

1988 ◽  
Vol 92 (7) ◽  
pp. 1928-1936 ◽  
Author(s):  
Cary J. Miller ◽  
Cindra A. Widrig ◽  
Deborah H. Charych ◽  
Marcin Majda

2011 ◽  
Vol 1360 ◽  
Author(s):  
Takashi Kushida ◽  
Takashi Nagase ◽  
Hiroyoshi Naito

ABSTRACTAir-mediated molecular ordering in self-organized polymer semiconductors of regioregular poly(3-hexylthiophene) (P3HT) and poly[(9,9′-dioctylfluorenyl-2,7-diyl)-(2,2′-bithiophene-5,5′-diyl)] (F8T2) was investigated using organic field-effect transistors (OFETs) fabricated by transfer-printing using poly(dimethylsiloxane) stamps with various surface energies. OFET measurements revealed that the charge transport in the polymer semiconductors via the air interface layer was better than that via the substrate interface layer. The results indicated that the formation of a highly ordered microstructure at the polymer/air interface through air-mediated self-organization occurs in many polymer semiconductors. This air-mediated self-organization was weaker than substrate-mediated self-organization, whose influence appeared in OFETs with thin semiconductor films.


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