Dispersion of Single-Walled Carbon Nanotubes of Narrow Diameter Distribution

2005 ◽  
Vol 109 (30) ◽  
pp. 14454-14460 ◽  
Author(s):  
Yongqiang Tan ◽  
Daniel E. Resasco
Keyword(s):  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Diameter Distribution ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes ◽  
Narrow Diameter Distribution

Synthesis of single-walled carbon nanotubes on graphene layers

2015 ◽  
Vol 51 (43) ◽  
pp. 8974-8977 ◽  
Author(s):  
Ranajit Ghosh ◽  
Takahiro Maruyama ◽  
Hiroki Kondo ◽  
Koji Kimoto ◽  
Takuro Nagai ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Diameter Distribution ◽  
Graphene Layers ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes ◽  
Narrow Diameter Distribution

Single-walled carbon nanotubes with a narrow diameter distribution are grown on graphene layers via chemical vapor deposition.

scholarly journals Growth of Single-Walled Carbon Nanotubes from Well-Defined POSS Nanoclusters Structure

NANO ◽  
2015 ◽  
Vol 10 (01) ◽  
pp. 1550004
Author(s):  
Yunyun Liu ◽  
Yali Hu ◽  
Qiran Cai ◽  
Xiangju Xu ◽  
Yin Chen ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Large Scale ◽  
Silicon Oxide ◽  
Single Walled Carbon Nanotubes ◽  
Diameter Distribution ◽  
Single Walled Carbon ◽  
Nanosized Materials ◽  
Industrial Level ◽  
Walled Carbon Nanotubes ◽  
Narrow Diameter Distribution

High-quality single-walled carbon nanotubes (SWNTs) with narrow diameter distribution can be generated from well-defined Si 8 O 12 nanoclusters structure which form from thermal decomposition of chemically modified polyhedral oligomeric silsesquioxane (POSS). The nanosized Si x O y particles were proved to be responsible for the SWNT growth and believed to be the reason for the narrow diameter distribution of the as-grown SWNTs. This could be extended to other POSS. The SWNTs grown from the nanosized Si x O y particles were found to be semiconducting enriched SWNTs (s-SWNTs). A facile patterning technology, direct photolithography, was developed for generating SWNT pattern, which is compatible to industrial-level fabrication of SWNTs pattern for device applications. The metal-free growth together with preferential growth of s-SWNTs and patterning in large scale from the structure-defined silicon oxide nanoclusters not only represent a big step toward the control growth of SWNTs and fabrication of devices for applications particularly in nanoelectronics and biomedicine but also provide a system for further studying and understanding the growth mechanism of SWNTs from nanosized materials and the relationship between the structure of SWNT and nonmetal catalysts.

scholarly journals Synthesis of single-walled carbon nanotubes with narrow diameter-distribution from fullerene

2003 ◽  
Vol 375 (5-6) ◽  
pp. 553-559 ◽  
Author(s):  
Shigeo Maruyama ◽  
Yuhei Miyauchi ◽  
Tadao Edamura ◽  
Yasuhiro Igarashi ◽  
Shohei Chiashi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Diameter Distribution ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes ◽  
Narrow Diameter Distribution
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