Rydberg Fingerprint Spectroscopy:  A New Spectroscopic Tool with Local and Global Structural Sensitivity

2005 ◽  
Vol 109 (22) ◽  
pp. 4899-4904 ◽  
Author(s):  
Jaimie L. Gosselin ◽  
Peter M. Weber
Keyword(s):  
Structural Sensitivity ◽  
Rydberg Fingerprint Spectroscopy ◽  
Spectroscopic Tool

scholarly journals A large-solid-angle X-ray Raman scattering spectrometer at ID20 of the European Synchrotron Radiation Facility

2017 ◽  
Vol 24 (2) ◽  
pp. 521-530 ◽  
Author(s):  
S. Huotari ◽  
Ch. J. Sahle ◽  
Ch. Henriquet ◽  
A. Al-Zein ◽  
K. Martel ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Raman Scattering ◽  
Solid Angle ◽  
European Synchrotron Radiation Facility ◽  
Electronic Excitations ◽  
Raman Scattering Spectroscopy ◽  
X Ray ◽  
Area Detector ◽  
Spectroscopic Tool

An end-station for X-ray Raman scattering spectroscopy at beamline ID20 of the European Synchrotron Radiation Facility is described. This end-station is dedicated to the study of shallow core electronic excitations using non-resonant inelastic X-ray scattering. The spectrometer has 72 spherically bent analyzer crystals arranged in six modular groups of 12 analyzer crystals each for a combined maximum flexibility and large solid angle of detection. Each of the six analyzer modules houses one pixelated area detector allowing for X-ray Raman scattering based imaging and efficient separation of the desired signal from the sample and spurious scattering from the often used complicated sample environments. This new end-station provides an unprecedented instrument for X-ray Raman scattering, which is a spectroscopic tool of great interest for the study of low-energy X-ray absorption spectra in materials under in situ conditions, such as in operando batteries and fuel cells, in situ catalytic reactions, and extreme pressure and temperature conditions.

Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
L.F. Fonseca ◽  
S.Z. Weisz ◽  
R. Rapaport ◽  
I. Balberg
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Thermal Quenching ◽  
Minority Carrier Lifetime ◽  
Dangling Bond ◽  
Recent Letter ◽  
Recombination Centers ◽  
Spectroscopic Tool ◽  
Hydrogenated Amorphous ◽  
Effect Of Light

AbstractIn a recent letter we have reported the first observation of the phenomenon of minority carrier-lifetime sensitization in hydrogenated amorphous silicon (a-Si:H). We find now that combining the study of this phenomenon with the study of the well-known phenomenon of majority carrier lifetime sensitization, in this material, can provide direct information on its density of states (DOS) distribution. This finding is important in view of the limitations associated with other methods designed for the same purpose. We have carried out then an experimental study of the effect of light soaking on the phototransport in a-Si:H. We found that the increase of the dangling bond concentration with light soaking affects the sensitization and thermal quenching of the majority carriers lifetime. Using computer simulations, we further show that the details of the observations associated with the sensitization effect yield semiquantitative information on the concentration and character of the recombination centers in a-Si:H.

Is the (6Li,7Be) reaction a useful spectroscopic tool?

1980 ◽  
Vol 6 (11) ◽  
pp. L187-L194 ◽  
Author(s):  
C L Woods ◽  
N A Jelley ◽  
A A Pilt ◽  
J S Winfield
Keyword(s):  
Spectroscopic Tool

scholarly journals Strain broadening of the 1042-nm zero phonon line of the NV− center in diamond: A promising spectroscopic tool for defect tomography

2017 ◽  
Vol 96 (7) ◽  
Author(s):  
T. B. Biktagirov ◽  
A. N. Smirnov ◽  
V. Yu. Davydov ◽  
M. W. Doherty ◽  
A. Alkauskas ◽  
...  
Keyword(s):  
Zero Phonon Line ◽  
Phonon Line ◽  
Nv Center ◽  
Spectroscopic Tool

Incomplete fusion as a spectroscopic tool

1997 ◽  
Vol 23 (10) ◽  
pp. 1191-1202 ◽  
Author(s):  
G D Dracoulis ◽  
A P Byrne ◽  
T Kibédi ◽  
T R McGoram ◽  
S M Mullins
Keyword(s):  
Incomplete Fusion ◽  
Spectroscopic Tool
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