Growth of Ternary Oxide Nanowires by Gold-Catalyzed Vapor-Phase Evaporation

2004 ◽  
Vol 108 (24) ◽  
pp. 8249-8253 ◽  
Author(s):  
Jie ◽  
Wang ◽  
Han ◽  
Fang ◽  
Yu ◽  
...  
2011 ◽  
Vol 13 (8) ◽  
pp. 3229-3233 ◽  
Author(s):  
Yanjie Su ◽  
Hao Wei ◽  
Zhi Yang ◽  
Liangming Wei ◽  
Eric Siu-Wai Kong ◽  
...  

2011 ◽  
Vol 1360 ◽  
Author(s):  
Matthew P. Chamberlin ◽  
Costel Constantin

ABSTRACTEasily available spin coating and vapor phase transport deposition techniques offer tremendous possibilities in fabricating inorganic/organic heterojunctions. We present here preliminary results from different thin film growth mechanisms including: i) PEDOT:PSS/Zn-nanowires/SiO2, ii) Zn-nanowires/PEDOT:PSS/SiO2, and iii) ZnO-nanowires/PEDOT:PSS/SiO2. The preliminary scanning electron microscopy and energy dispersive spectroscopy results show that Zn nanowires bond better to the non-annealed PEDOT:PSS thin films. It was also found that ZnO nanowires grow homogeneously on annealed PEDOT:PSS surfaces with colloidal Au nanoparticles as bonding reaction catalysts.


2005 ◽  
Vol 17 (16) ◽  
pp. 4227-4234 ◽  
Author(s):  
Zuoming Zhu ◽  
Tsung-Liang Chen ◽  
Yi Gu ◽  
John Warren ◽  
Richard M. Osgood

2020 ◽  
Vol 3 (9) ◽  
pp. 8679-8690
Author(s):  
Jiwan Acharya ◽  
Tae Hoon Ko ◽  
Jae-Gyoung Seong ◽  
Min-Kang Seo ◽  
Myung-Seob Khil ◽  
...  

Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  

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