Structure of Methanol Confined in MCM-41 Investigated by Large-Angle X-ray Scattering Technique

2005 ◽  
Vol 109 (2) ◽  
pp. 892-899 ◽  
Author(s):  
Toshiyuki Takamuku ◽  
Hirokazu Maruyama ◽  
Shigeharu Kittaka ◽  
Shuichi Takahara ◽  
Toshio Yamaguchi
2004 ◽  
Vol 33 (6/7) ◽  
pp. 641-660 ◽  
Author(s):  
Toshiyuki Takamuku ◽  
Hirokazu Maruyama ◽  
Kenji Watanabe ◽  
Toshio Yamaguchi

2007 ◽  
Vol 111 (31) ◽  
pp. 9270-9280 ◽  
Author(s):  
Toshiyuki Takamuku ◽  
Yasuhiro Kyoshoin ◽  
Hiroshi Noguchi ◽  
Shoji Kusano ◽  
Toshio Yamaguchi

2001 ◽  
Vol 714 ◽  
Author(s):  
Kazuhiko Omote ◽  
Shigeru Kawamura

ABSTRACTWe have successively developed a new x-ray scattering technique for a non-destructive determination of pore-size distributions in porous low-κ thin films formed on thick substrates. The pore size distribution in a film is derived from x-ray diffuse scattering data, which are measured using offset θ/2θ scans to avoid strong specular reflections from the film surface and its substrate. Γ-distribution mode for the pores in the film is used in the calculation. The average diameter and the dispersion parameter of the Γ-distribution function are varied and refined by computer so that the calculated scattering pattern best matches to the experimental pattern. The technique has been used to analyze porous methyl silsesquioxane (MSQ) films. The pore size distributions determined by the x-ray scattering technique agree with that of the commonly used gas adsorption technique. The x-ray technique has been also used successfully determine small pores less than one nanometer in diameter, which is well below the lowest limit of the gas adsorption technique.


1994 ◽  
Vol 375 ◽  
Author(s):  
Z. H. Ming ◽  
Y. L. Soo ◽  
S. Huang ◽  
Y. H. Kao ◽  
K. Stair ◽  
...  

AbstractInterfacial microstructures in 100-period InxGa1−xAs(15Å)/GaAs(100Å) superlattices grown on GaAs (100) substrates by molecular beam epitaxy were studied by using large angle x-ray scattering techniques. Unusual satellite peaks in the lateral direction parallel to the sample surface were observed in a sample with x = 0.535 grown at 480°C, indicating an in-plane structural ordering. This result is confirmed by high resolution transmission electron microscopy observations that thickness modulation in the InxGa1−xAs layers gives rise to long-range lateral periodic arrays of cluster-like microstructures with spacing on the order of a few hundred Ångstroms. This thickness modulation is found to occur only in [110] direction, thus the material can be viewed as a somewhat disordered array of grown-in parallel quantum wires.


1982 ◽  
Vol 46 (2) ◽  
pp. 137-149 ◽  
Author(s):  
Alain Mosset ◽  
Pierre Lecante ◽  
Jean Galy ◽  
Jacques Livage

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