Fabrication of Size-Tunable Gold Nanoparticles Array with Nanosphere Lithography, Reactive Ion Etching, and Thermal Annealing

2005 ◽  
Vol 109 (22) ◽  
pp. 11100-11109 ◽  
Author(s):  
B. J. Y. Tan ◽  
C. H. Sow ◽  
T. S. Koh ◽  
K. C. Chin ◽  
A. T. S. Wee ◽  
...  
2007 ◽  
Vol 111 (11) ◽  
pp. 4116-4124 ◽  
Author(s):  
Erin M. Hicks ◽  
Olga Lyandres ◽  
W. Paige Hall ◽  
Shengli Zou ◽  
Matthew R. Glucksberg ◽  
...  

2009 ◽  
Vol 18 (04) ◽  
pp. 633-640
Author(s):  
ANNA MUSTONEN ◽  
HARRI LIPSANEN

We present a study of optical transmission through metal-coated non-close-packed colloidal crystals. The arrays combine semi-shell particles and circular holes simultaneously. We show that the optical response of the structures can be tuned by altering the size of the semi-shell particles and holes. The non-close-packed colloidal crystals were fabricated using modified nanosphere lithography and reactive ion etching.


1991 ◽  
Vol 240 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
W. De Raedt ◽  
C. Van Hoof ◽  
G. Borghs ◽  
...  

ABSTRACTThe damage introduced by CH4/H2 reactive ion etching (RIE) and its recovery after thermal annealing has been investigated by Hall measurements and low temperature photoluminescence (PL) on pseudomorphic AlGaAs/InGaAs modulation doped structures. After plasma exposure, the PL intensity has significantly decreased and shifted in energy. In order to study the recovery of the damage introduced by the plasma, thermal annealing was done at temperatures between 350 and 500°C. We observed that the luminescence emission is totally recovered after annealing at 450°C. Hall measurements at room temperature (RT) and at 77K showed that the electrical characteristics of these structures can be restored only after thermal annealing at 500°C.The optimised etching conditions have been applied in a fabrication process for submicron dry gate recessed pseudomorphic delta-doped AlGaAs/InGaAs modulation doped field effect transistors (MODFETs). For a 0.25 mm gatelength device the maximum DC transconductance value was as high as 680 mS/mm. The same value was extracted from measurements at 15 GHz.


1988 ◽  
Vol 135 (4) ◽  
pp. 1037-1038 ◽  
Author(s):  
S. J. Fonash ◽  
X. C. Mu ◽  
S. Chakravarti ◽  
L. C. Rathbun

2019 ◽  
Vol 21 (7) ◽  
pp. 3771-3780 ◽  
Author(s):  
Steven Larson ◽  
Daniel Carlson ◽  
Bin Ai ◽  
Yiping Zhao

Ag/Ti composite nanohole arrays were fabricated through a combination of nanosphere lithography, reactive ion etching, and co-deposition. The sensing performances were improved by the tunable dispersion of the Ag/Ti composites.


2003 ◽  
Vol 776 ◽  
Author(s):  
Chun-Wen Kuo ◽  
Jau-Ye Shiu ◽  
Yi-Hong Cho ◽  
Peilin Chen

AbstractAnovel scheme for the fabrication of large-area nanoimprint stamps has been developed based on the utilization of a combination of nanosphere lithography and reactive ion etching. Both single and double layer polystyrene beads have been employed to construct well-ordered, periodic silicon nanopillar arrays. The nanopillar arrays fabricated by this method have been successfully used as the stamps for nanoimprint lithography. Our result indicates that this approach is capable of producing large-area sub-50 nm periodic nanostructures.


Sign in / Sign up

Export Citation Format

Share Document