Silicon Surface Passivation by Organic Monolayers:  Minority Charge Carrier Lifetime Measurements and Kelvin Probe Investigations

2003 ◽  
Vol 107 (28) ◽  
pp. 6846-6852 ◽  
Author(s):  
Alexander B. Sieval ◽  
Carolien L. Huisman ◽  
Axel Schönecker ◽  
Frank M. Schuurmans ◽  
Arvid S. H. van der Heide ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Silicon Surface ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Kelvin Probe ◽  
Organic Monolayers ◽  
Minority Charge Carrier ◽  
Lifetime Measurements ◽  
Silicon Surface Passivation ◽  
Charge Carrier Lifetime

scholarly journals Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Solar RRL ◽  
2021 ◽  
Author(s):  
Bernd Steinhauser ◽  
Tim Niewelt ◽  
Armin Richter ◽  
Rebekka Eberle ◽  
Martin Schubert
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Minority Charge Carrier ◽  
Charge Carrier Lifetime

Graphene oxide-TiO 2 and reduced graphene oxide-TiO 2 nanocomposites: Insight in charge-carrier lifetime measurements

2017 ◽  
Vol 287 ◽  
pp. 189-195 ◽  
Author(s):  
Ewelina Kusiak-Nejman ◽  
Agnieszka Wanag ◽  
Łukasz Kowalczyk ◽  
Joanna Kapica-Kozar ◽  
Christophe Colbeau-Justin ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Charge Carrier ◽  
Reduced Graphene Oxide ◽  
Carrier Lifetime ◽  
Lifetime Measurements ◽  
Reduced Graphene ◽  
Charge Carrier Lifetime

Investigation of Defects in the Edge Region of Multicrystalline Solar Silicon Ingots

2005 ◽  
Vol 108-109 ◽  
pp. 531-538 ◽  
Author(s):  
M. Rossberg ◽  
M. Naumann ◽  
K. Irmscher ◽  
U. Juda ◽  
A. Lüdge ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Phase Boundary ◽  
Carrier Lifetime ◽  
Interstitial Oxygen ◽  
Minority Charge Carrier ◽  
Convex Shape ◽  
Laser Scattering ◽  
Photoconductivity Decay ◽  
Solar Silicon ◽  
Charge Carrier Lifetime

The structural and electrical properties of as grown multicrystalline (mc) solar silicon have been characterized with special emphasis on the ingot's edge regions. For this purpose a vertical cross section of an mc-Si Bridgman ingot was investigated by Fourier transform infrared spectroscopy (FTIR), laser scattering tomography (LST), lateral photovoltage scanning (LPS), infrared microscopy and microwave detected photoconductivity decay (&PCD). Images of the distribution of dislocations, grain boundaries, precipitates, impurities (O, N, C) and the minority charge carrier lifetime were obtained, partly differentiating the defects by their electrical activity. In particular the LPS method displays dopant striations indicating the shape of the phase boundary. Deviations of the phase boundary from a slightly convex shape in the middle of the ingot to a concave one in the vicinity of the side walls could be observed. The existence of an horizontal temperature gradient deduced from this shape is the reason for convection in the melt. The influence on the concentration profiles of interstitial oxygen and the correlation with the minority charge carrier lifetime are discussed.

Surface Passivation of Silicon Wafers by Iodine-Ethanol (I-E) for Minority Carrier Lifetime Measurements

2013 ◽  
Vol 652-654 ◽  
pp. 901-905 ◽  
Author(s):  
Jing Wei Chen ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Bao Jun Yan ◽  
Su Zhou ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
P Type ◽  
Different Thickness ◽  
Minority Carriers

The effective minority carrier lifetime (τeff) depends upon the quality of surface passivation, which by means of the microwave photoconductance decays (μPCD) method. The effective minority carrier lifetime (τeff) cannot reveal the real bulk lifetime of minority carriers (τb) . We have applied iodine-ethanol (I-E) treatment to silicon surface at different molar concentrations and shown that the effective concentrations ranges was 0.08mol/L~0.16 mol/L, the maximum The effective minority carrier lifetime (τeff) of n-type monocrystalline and p-type monocrystalline was 973.71μs and 362.6μs, respectively. We also accurately evaluate the bulk lifetime of minority carriers by measured with different thickness of silicon substrate.

Reliability of results obtained in measuring the minority charge carrier lifetime in semiconductors by the PEM effect method

1993 ◽  
Vol 36 (1) ◽  
pp. 69-71
Author(s):  
T. B. Viryasova ◽  
V. S. Garnyk ◽  
A. V. Naumov ◽  
V. D. Isaikin ◽  
M. R. Raukhman ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Reliability Of Results ◽  
Minority Charge Carrier ◽  
Charge Carrier Lifetime ◽  
Effect Method

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

2019 ◽  
Vol 217 (4) ◽  
pp. 1900534 ◽  
Author(s):  
Dmitry A. Kudryashov ◽  
Alexander S. Gudovskikh ◽  
Artem I. Baranov ◽  
Ivan A. Morozov ◽  
Anatoly O. Monastyrenko
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Dry Etching ◽  
Minority Charge Carrier ◽  
Charge Carrier Lifetime

scholarly journals Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging

2011 ◽  
Vol 110 (5) ◽  
pp. 054508 ◽  
Author(s):  
David Kiliani ◽  
Gabriel Micard ◽  
Benjamin Steuer ◽  
Bernd Raabe ◽  
Axel Herguth ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Minority Charge Carrier ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Charge Carrier Lifetime
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