Modeling and Experimental Examination of the Solonitsyn Memory Effect on the Surface of Wide Band Gap Metal Oxides§

2004 ◽  
Vol 108 (7) ◽  
pp. 2354-2361 ◽  
Author(s):  
S. A. Polikhova ◽  
N. S. Andreev ◽  
A. V. Emeline ◽  
V. K. Ryabchuk ◽  
N. Serpone
Keyword(s):  
Metal Oxides ◽  
Band Gap ◽  
Memory Effect ◽  
Wide Band ◽  
Wide Band Gap ◽  
Experimental Examination

P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

2009 ◽  
Vol 10 (5) ◽  
pp. 932-938 ◽  
Author(s):  
Michael Kröger ◽  
Sami Hamwi ◽  
Jens Meyer ◽  
Thomas Riedl ◽  
Wolfgang Kowalsky ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Band Gap ◽  
Transition Metal Oxides ◽  
Molybdenum Trioxide ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

Phase Mapping Sputter Deposited Wide Band-Gap Metal Oxides

1992 ◽  
Vol 242 ◽  
Author(s):  
C.R. Aita ◽  
R.C. Lee ◽  
C.-K. Kwok ◽  
E.A. Kolawa
Keyword(s):  
Metal Oxides ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
Deposition Process ◽  
Sputter Deposition ◽  
Wide Band Gap ◽  
Growth Environment ◽  
Reactive Sputter Deposition ◽  
Sputter Deposited

ABSTRACTReactive sputter deposition is a widely-used process for growing films of high melting point materials near room temperature and desirable metastable structures not attainable in material grown under conditions of thermodynamic equilibrium. Both categories include wide band-gap metal oxides. A first step towards reproducible growth is to develop a “phase map” for the metal-oxygen system of interest. The map graphically relates independent sputter deposition process parameters, the growth environment, and the metallurgical phase(s) formed in the film. This paper shows how phase maps are constructed and used to observe general trends in oxide phase formation sequence, with examples from the Nb-O, Y-O, and Zr-O systems.

Organic Chromophores Designed for Hole Injection into Wide-Band-Gap Metal Oxides for Solar Fuel Applications

2020 ◽  
Vol 32 (19) ◽  
pp. 8158-8168
Author(s):  
Linda Nhon ◽  
Aaron D. Taggart ◽  
Taylor Moot ◽  
M. Kyle Brennaman ◽  
Pradeepkumar Jagadesan ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Band Gap ◽  
Wide Band ◽  
Hole Injection ◽  
Solar Fuel ◽  
Wide Band Gap ◽  
Organic Chromophores

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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