Probing the Electronic Structure of Small Molecular Anions by Photoelectron Imaging†

2003 ◽  
Vol 107 (40) ◽  
pp. 8215-8224 ◽  
Author(s):  
Eric Surber ◽  
Richard Mabbs ◽  
Andrei Sanov
2018 ◽  
Vol 20 (37) ◽  
pp. 24019-24026 ◽  
Author(s):  
Cate S. Anstöter ◽  
Thomas E. Gartmann ◽  
Laurence H. Stanley ◽  
Anastasia V. Bochenkova ◽  
Jan R. R. Verlet

2D photoelectron spectroscopy combined with high-level ab initio calculations provides insights into the dissociative electron attachment of para-dinitrobenzene.


RSC Advances ◽  
2021 ◽  
Vol 11 (31) ◽  
pp. 18729-18736
Author(s):  
Yongtian Wang ◽  
Changcai Han ◽  
Jing Hong ◽  
Zejie Fei ◽  
Changwu Dong ◽  
...  

The PES of VO2H− was detected at 814 nm. The electronic configuration of anionic and neutral of VO2H is 4A′′ and 3A′′, respectively. The electron was detached from the s-type 17a′ MO of the anionic ground state of VO2H.


2018 ◽  
Vol 20 (22) ◽  
pp. 15543-15549 ◽  
Author(s):  
Michael A. Parkes ◽  
Jonathan Crellin ◽  
Alice Henley ◽  
Helen H. Fielding

Probing the electronic structure of the deprotonated indole anion using photoelectron imaging and quantum chemistry calculations.


2009 ◽  
Vol 38 (8) ◽  
pp. 2169 ◽  
Author(s):  
Richard Mabbs ◽  
Emily R. Grumbling ◽  
Kostyantyn Pichugin ◽  
Andrei Sanov

Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.


Author(s):  
J. Fink

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.


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