scholarly journals Interfacial Charge Transfer and Colloidal Semiconductor Dye-Sensitization:  Mechanism Assessment via Stark Emission Spectroscopy

2002 ◽  
Vol 106 (20) ◽  
pp. 5139-5142 ◽  
Author(s):  
Keith A. Walters ◽  
Dennis A. Gaal ◽  
Joseph T. Hupp
Keyword(s):  
Charge Transfer ◽  
Emission Spectroscopy ◽  
Dye Sensitization ◽  
Interfacial Charge Transfer ◽  
Colloidal Semiconductor ◽  
Interfacial Charge

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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