Investigation of the Size-Scaling Behavior of Spatially Nonuniform Barrier Height Contacts to Semiconductor Surfaces Using Ordered Nanometer-Scale Nickel Arrays on Silicon Electrodes

2001 ◽  
Vol 105 (49) ◽  
pp. 12303-12318 ◽  
Author(s):  
Robert C. Rossi ◽  
Nathan S. Lewis
2003 ◽  
Vol 14 (07) ◽  
pp. 945-954 ◽  
Author(s):  
MEHMET DİLAVER ◽  
SEMRA GÜNDÜÇ ◽  
MERAL AYDIN ◽  
YİĞİT GÜNDÜÇ

In this work we have considered the Taylor series expansion of the dynamic scaling relation of the magnetization with respect to small initial magnetization values in order to study the dynamic scaling behavior of two- and three-dimensional Ising models. We have used the literature values of the critical exponents and of the new dynamic exponent x0 to observe the dynamic finite-size scaling behavior of the time evolution of the magnetization during early stages of the Monte Carlo simulation. For the three-dimensional Ising model we have also presented that this method opens the possibility of calculating z and x0 separately. Our results show good agreement with the literature values. Measurements done on lattices with different sizes seem to give very good scaling.


1993 ◽  
Vol 73 (10) ◽  
pp. 6760-6762 ◽  
Author(s):  
F. Huang ◽  
G. J. Mankey ◽  
M. T. Kief ◽  
R. F. Willis

2009 ◽  
Vol 63 (3) ◽  
pp. 443-460 ◽  
Author(s):  
Jens Braun ◽  
Bertram Klein

2014 ◽  
Vol 104 (24) ◽  
pp. 242416 ◽  
Author(s):  
B. B. Chen ◽  
P. F. Chen ◽  
H. R. Xu ◽  
X. L. Tan ◽  
F. Jin ◽  
...  

2000 ◽  
Vol 07 (05n06) ◽  
pp. 555-560 ◽  
Author(s):  
J. NOGAMI

Growth of metals on semiconductor surfaces can result in the self-assembly of a variety of 1D or 2D structures whose lateral dimensions range from one atom to tens of atoms. Over this range in length scales, STM gives information about the structure, the growth behavior and the electronic properties of these small structures. STM and STS data on several different systems are presented. In addition, ongoing and future efforts to measure the transport properties of these small structures are described.


2010 ◽  
Vol 81 (5) ◽  
Author(s):  
S. L. A. de Queiroz ◽  
R. R. dos Santos ◽  
R. B. Stinchcombe

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