Use of a Dynamic Monte Carlo Simulation in the Study of Nucleation-and-Growth Models for CO Electrochemical Oxidation†

2001 ◽  
Vol 105 (37) ◽  
pp. 8663-8671 ◽  
Author(s):  
Carol Korzeniewski ◽  
Dawn Kardash
2016 ◽  
Vol 11 (1) ◽  
pp. 1600039 ◽  
Author(s):  
Dimitrios Meimaroglou ◽  
Prokopios Pladis ◽  
Costas Kiparissides

2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.


2006 ◽  
Vol 243 (1) ◽  
pp. 83-90 ◽  
Author(s):  
Mamdouh Al-Harthi ◽  
João B.P. Soares ◽  
Leonardo C. Simon

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