A DFT Study on the C−H Bond Dissociation Enthalpies of Haloalkanes:  Correlation between the Bond Dissociation Enthalpies and Activation Energies for Hydrogen Abstraction

2000 ◽  
Vol 104 (40) ◽  
pp. 9244-9249 ◽  
Author(s):  
Asit K. Chandra ◽  
Tadafumi Uchimaru
2001 ◽  
Vol 2 ◽  
pp. 45-51 ◽  
Author(s):  
Shingo Urata ◽  
Tadafumi Uchimaru ◽  
Asit K. Chandra ◽  
Akira Takada ◽  
Akira Sekiya

2020 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Jen-Chuan Tung ◽  
Tsung-Che Li ◽  
Yen-Jui Teseng ◽  
Po-Liang Liu

The aim of this research is the study of hydrogen abstraction reactions and methyl adsorption reactions on the surfaces of (100), (110), and (111) oriented nitrogen-doped diamond through first-principles density-functional calculations. The three steps of the growth mechanism for diamond thin films are hydrogen abstraction from the diamond surface, methyl adsorption on the diamond surface, and hydrogen abstraction from the methylated diamond surface. The activation energies for hydrogen abstraction from the surface of nitrogen-undoped and nitrogen-doped diamond (111) films were −0.64 and −2.95 eV, respectively. The results revealed that nitrogen substitution was beneficial for hydrogen abstraction and the subsequent adsorption of methyl molecules on the diamond (111) surface. The adsorption energy for methyl molecules on the diamond surface was generated during the growth of (100)-, (110)-, and (111)-oriented diamond films. Compared with nitrogen-doped diamond (100) films, adsorption energies for methyl molecule adsorption were by 0.14 and 0.69 eV higher for diamond (111) and (110) films, respectively. Moreover, compared with methylated diamond (100), the activation energies for hydrogen abstraction were by 0.36 and 1.25 eV higher from the surfaces of diamond (111) and (110), respectively. Growth mechanism simulations confirmed that nitrogen-doped diamond (100) films were preferred, which was in agreement with the experimental and theoretical observations of diamond film growth.


1980 ◽  
Vol 33 (7) ◽  
pp. 1437
Author(s):  
NL Arthur ◽  
PJ Newitt

Hydrogen abstraction by CF3 radicals from CH3COOCH3 and CD3COOCH3 has been studied in the temperature range 78-242°, and data have been obtained for the reactions: CF3 + CH3COOCH3 → CF3H+[C3H5O2] �������������(3) CF3 + CH3COOCH3 → CF3H+CH2COOCH3������������ (4) CF3 + CD3COOCH3 → CF3D+CD2COOCH3������������ (6) CF3 + CD3COOCH3 → CF3H+CD3COOCH2������������ (7) The corresponding rate constants, based on the value of 1013.36 cm3 mol-1 S-1 for the recombination of CF3 radicals, are given by (k in cm3 mol-1 s-1 and E in J mol-1): logk3 = (11.52�0.05)-(35430�380)/19.145T ���� (3)logk4 = (11.19�0.07)-(34680�550)/19.145T ���� (4)logk6 = (11.34�0.06)-(46490�490)/19.145T ���� (6)logk7 = (11.26�0.05)-(36440�400)/19.145T ���� (7)At 400 K, 59% of abstraction occurs from the acetyl group, and 41 % from the methoxy group. The kinetic isotope effect at 400 K for attack on the acetyl group is 25, due mainly to a difference in activation energies.


2018 ◽  
Vol 445 ◽  
pp. 307-315 ◽  
Author(s):  
A. Shubin ◽  
I. Zilberberg ◽  
I. Ismagilov ◽  
E. Matus ◽  
M. Kerzhentsev ◽  
...  

1956 ◽  
Vol 34 (2) ◽  
pp. 103-107 ◽  
Author(s):  
P. B. Ayscough ◽  
E. W. R. Steacie

A study of the reactions of trifluoromethyl radicals, produced by the photolysis of hexafluoroacetone, with propane, n-butane, and isobutane has been made. The rate constants of the hydrogen-abstraction reactions have been determined at temperatures between 27 °C and 119 °C and the activation energies found to be 6.5 ± 0.5, 5.1 ± 0.3, and 4.7 ± 0.3 kcal./mole respectively. These values are compared with those obtained for the reactions with methane and ethane, and with the corresponding reactions of methyl radicals.


1973 ◽  
Vol 26 (6) ◽  
pp. 1269 ◽  
Author(s):  
NL Arthur ◽  
BR Harman

Hydrogen atom abstraction from SiH3Cl by CF3 radicals ����������������� CF3 + SiH3Cl → CF3H+SiH2Cl������������������� (1) has been studied in the temperature range 69-168�. The rate constant, based on Ayscough's value of 1013.36 cm3 mol-1 s-1 for the recombination of CF3 radicals, is given by (k1 in cm3 mol-1 s-1, E in kJ mol-1): ������������������ logk1 = (12.38�0.06)-(25.72�0.41)/2.303RT At 400 K, the rate constant for CF3 + SiH3Cl is greater than the average value reported for CF3+SiHCl3 by a factor of 3.6. This is due to a difference in A factors since the activation energies are equal within experimental error.


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