Probing Organization and Structural Characteristics of Alkanethiols Adsorbed on Gold and of Model Alkane Compounds through Their Valence Electronic Structure:  An Ultraviolet Photoelectron Spectroscopy Study

2000 ◽  
Vol 104 (38) ◽  
pp. 9029-9037 ◽  
Author(s):  
A.-S. Duwez ◽  
G. Pfister-Guillouzo ◽  
J. Delhalle ◽  
J. Riga
1999 ◽  
Vol 561 ◽  
Author(s):  
U. Theissl ◽  
E.J.W. List ◽  
N. Koch ◽  
A. Vollmer ◽  
S. Schrader ◽  
...  

ABSTRACTThin films of p-sexiphenyl (6P) were doped with increasing amounts of potassium in situ, and the change in the valence electronic structure of 6P upon the alkali metal deposition was followed with ultraviolet photoelectron spectroscopy. We observe the evolution of new intragap emissions, which are attributed to the formation of bipolarons, even for very low doping concentrations. The low binding energy intra-gap emission exhibits a pronounced asymmetric lineshape, in contrast to the findings when cesium is used as dopant. In order to investigate whether this lineshape is due to different emissive electronic species in the bulk and on the surface of the 6P film the take-off angle for the photoelectrons was varied. As no change in the lineshape is found when going from normal to near-grazing emission we can exclude that charged 6P molecules in the bulk and on the surface yield different valence electronic spectra. Therefore, the characteristic lineshape of the low binding energy emission is proposed to be related to the interaction of the doped organic molecule with the different counterions.


1986 ◽  
Vol 34 (10) ◽  
pp. 6874-6879 ◽  
Author(s):  
M. G. Thube ◽  
S. K. Kulkarni ◽  
D. Huerta ◽  
Arun S. Nigavekar

2019 ◽  
Vol 58 (SI) ◽  
pp. SIIC02
Author(s):  
Yuichi Sugizaki ◽  
Yuki Shimato ◽  
Tomoya Yoshida ◽  
Riki Sugimoto ◽  
Naoyuki Maejima ◽  
...  

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.


2011 ◽  
Vol 134 (7) ◽  
pp. 074312 ◽  
Author(s):  
Barbara Brena ◽  
Carla Puglia ◽  
Monica de Simone ◽  
Marcello Coreno ◽  
Kartick Tarafder ◽  
...  

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