Hydroxycoumarine Azodye, Thermal Stability, Harmonic Vibrational Spectra, Conductance, and pH Measurements

2010 ◽  
Vol 55 (1) ◽  
pp. 267-272 ◽  
Author(s):  
F. I. El-Dossoki ◽  
A. F. Shoair ◽  
N. M. Hosny
Keyword(s):  
Thermal Stability ◽  
Vibrational Spectra ◽  
Ph Measurements

Synthesis, vibrational spectra and thermal stability of Ag3O4 and related Ag7O8X salts

Polyhedron ◽  
2007 ◽  
Vol 26 (13) ◽  
pp. 3310-3322 ◽  
Author(s):  
Geoffrey I.N. Waterhouse ◽  
James B. Metson ◽  
Graham A. Bowmaker
Keyword(s):  
Thermal Stability ◽  
Vibrational Spectra ◽  
Thermal Stability Of

2-Hydroxy-4-methylbenzenesulfonic acid dihydrate: Crystal structure, vibrational spectra, proton conductivity, and thermal stability

2010 ◽  
Vol 84 (3) ◽  
pp. 444-459 ◽  
Author(s):  
A. V. Pisareva ◽  
G. V. Shilov ◽  
A. I. Karelin ◽  
Yu. A. Dobrovolsky ◽  
R. V. Pisarev
Keyword(s):  
Crystal Structure ◽  
Thermal Stability ◽  
Proton Conductivity ◽  
Vibrational Spectra

scholarly journals Synthesis, thermal stability, vibrational spectra and conformational studies of novel dicationic meta-xylyl linked bis-1-methylimidazolium ionic liquids

2019 ◽  
Vol 1186 ◽  
pp. 68-79 ◽  
Author(s):  
Mostefa Boumediene ◽  
Boumediene Haddad ◽  
Annalisa Paolone ◽  
Mokhtar Drai ◽  
Didier Villemin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ionic Liquids ◽  
Vibrational Spectra ◽  
Conformational Studies

Thermal stability and vibrational spectra of the sheet borate tuzlaite, NaCa[B5O8(OH)2]·3H2O

2003 ◽  
Vol 88 (2-3) ◽  
pp. 271-276 ◽  
Author(s):  
Vladimir Bermanec ◽  
Krešimir Furić ◽  
Maša Rajić ◽  
Goran Kniewald
Keyword(s):  
Thermal Stability ◽  
Vibrational Spectra

Synthèses et analyses structurales de perchlorates anhydres d'In(III) et de Tl(III) M(ClO4)3 et ClO2M(ClO4)4; (M = In, Tl)

1985 ◽  
Vol 63 (12) ◽  
pp. 3499-3504 ◽  
Author(s):  
Mohieddine Fourati ◽  
Moncef Chaabouni ◽  
Hassine Ferid Ayedi ◽  
Jean-Louis Pascal ◽  
Jacqueline Potier
Keyword(s):  
Thermal Stability ◽  
Vibrational Spectra ◽  
Dynamic Vacuum ◽  
Polymeric Structure ◽  
Space Group ◽  
Ir And Raman

Reactions of chlorine trioxide (Cl2O6) with anhydrous InCl3, TlCl3, and InCl3•4H2O have been investigated. They give two chloryl perchlorato metallates: ClO2In(ClO4)4 and ClO2Tl(ClO4)4, which can be decomposed on heating (80 °C) under dynamic vacuum. They yield respectively In(ClO4)3 and Tl(ClO4)3. Tl(ClO4)3 appears to have weaker thermal stability than In(ClO4)3, which is stable up to 272 °C; the former decomposes starting at 95 °C to give TlO0.5(ClO4)2. In(ClO4)3 and Tl(ClO4)3 have the same space group [Formula: see text]. The best assignment of their ir and Raman vibrational spectra can be made on the basis of a polymeric structure (Asl3 type) with bridging bidentate perchlorato groups strongly bonded to the metal. The ClO2M(ClO4)4 (M = In, Tl) salts are well defined. The cation ClO2+ is unambiguously characterized; it interacts with the anion M(ClO4)4−, which has monodentate and bidentate perchlorate groups.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

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