Quadruply B←N-Fused Dibenzo-azaacene with High Electron Affinity and High Electron Mobility

2019 ◽  
Vol 141 (42) ◽  
pp. 17015-17021 ◽  
Author(s):  
Yang Min ◽  
Chuandong Dou ◽  
Dan Liu ◽  
Huanli Dong ◽  
Jun Liu
Keyword(s):  
Electron Affinity ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Mobility ◽  
High Electron Affinity

Fusion of Phosphole and 1,1′-Biacenaphthene: Phosphorus(V)-Containing Extended π-Systems with High Electron Affinity and Electron Mobility

2011 ◽  
Vol 50 (35) ◽  
pp. 8016-8020 ◽  
Author(s):  
Yoshihiro Matano ◽  
Arihiro Saito ◽  
Tatsuya Fukushima ◽  
Yasuaki Tokudome ◽  
Furitsu Suzuki ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Affinity

Fusion of Phosphole and 1,1′-Biacenaphthene: Phosphorus(V)-Containing Extended π-Systems with High Electron Affinity and Electron Mobility

2011 ◽  
Vol 123 (35) ◽  
pp. 8166-8170 ◽  
Author(s):  
Yoshihiro Matano ◽  
Arihiro Saito ◽  
Tatsuya Fukushima ◽  
Yasuaki Tokudome ◽  
Furitsu Suzuki ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Affinity

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Polymer Crystals: Approaching Crystal Structure and High Electron Mobility in Conjugated Polymer Crystals (Adv. Mater. 10/2021)

2021 ◽  
Vol 33 (10) ◽  
pp. 2170075
Author(s):  
Ze‐Fan Yao ◽  
Yu‐Qing Zheng ◽  
Jin‐Hu Dou ◽  
Yang Lu ◽  
Yi‐Fan Ding ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Mobility ◽  
Conjugated Polymer ◽  
High Electron ◽  
High Electron Mobility ◽  
Polymer Crystals

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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