Critical Nuclei Size, Rate, and Activation Energy of H2 Gas Nucleation

2018 ◽  
Vol 140 (11) ◽  
pp. 4047-4053 ◽  
Author(s):  
Sean R. German ◽  
Martin A. Edwards ◽  
Hang Ren ◽  
Henry S. White
Keyword(s):  
Activation Energy ◽  
Critical Nuclei

Exploring the limits of fast phase change materials

2001 ◽  
Vol 674 ◽  
Author(s):  
Han-Willem Wöltgens ◽  
Ralf Detemple ◽  
Inés Friedrich ◽  
Walter K. Njoroge ◽  
Ingo Thomas ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Change ◽  
Phase Change Materials ◽  
Ternary Alloys ◽  
Electrical Measurements ◽  
Material Synthesis ◽  
Fast Phase ◽  
Chalcogenide Alloys ◽  
Speed Up ◽  
Critical Nuclei

ABSTRACTIn the last decade a number of chalcogenide alloys, including ternary alloys of GeSbTe and quaternary alloys of InAgSbTe, have been identified which enable fast phase change recording. In the quest for materials with improved phase change kinetics we present two different approaches. By comparing alloys with well-defined stoichiometries the mechanisms which govern the transformation kinetics are determined. Optical and electrical measurements determine the activation energy for crystallization to 2.24 ± 0.11 eV for Ge2Sb2Te5 and to 3.71 ± 0.07 eV for Ge4Sb1Te5, respectively. It is shown that for GeSbTe-alloys with different composition the activation energy increases linearly with increasing Ge content. Power-time- reflectivity change diagrams recorded with a static tester reveal that Ge2Sb2Te5, in agreement with previous data, recrystallizes by the growth of sub critical nuclei, while Ge4Sb1Te5 grows from the crystalline rim surrounding the bit.To speed up the search for faster materials we employ concepts of combinatorial material synthesis by producing films with a stoichiometry gradient. Then laterally resolved secondary neutral mass spectroscopy (SNMS) combined with the static tester are used to identify the composition with superior properties for phase change applications.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

White- and Brown-Rice Supplementation Improves Insulin Tolerance, Brown Fat Activation, Energy Expenditure, and Changes the Gut Microflora in Diet-Induced Obesity

Diabetes ◽  
2018 ◽  
Vol 67 (Supplement 1) ◽  
pp. 1897-P
Author(s):  
HISASHI YOKOMIZO ◽  
ATSUSHI ISHIKADO ◽  
TAKANORI SHINJO ◽  
KYOUNGMIN PARK ◽  
YASUTAKA MAEDA ◽  
...  
Keyword(s):  
Activation Energy ◽  
Energy Expenditure ◽  
Brown Rice ◽  
Brown Fat ◽  
Gut Microflora ◽  
Diet Induced Obesity ◽  
Insulin Tolerance

Activation energy of relaxation processes in chalcogenide glasses

2013 ◽  
Vol 34 (0) ◽  
pp. 59-63
Author(s):  
А. А. Горват ◽  
В. М. Кришеник ◽  
А. Е. Кріштофорій ◽  
В. В. Мінькович ◽  
О. А. Молнар
Keyword(s):  
Activation Energy ◽  
Chalcogenide Glasses ◽  
Relaxation Processes

Dielectric Relaxation Studies of Silver Nanoparticles dispersed Liquid Crystal

2015 ◽  
Vol 8 (3) ◽  
pp. 2176-2188 ◽  
Author(s):  
Keisham Nanao Singh
Keyword(s):  
Activation Energy ◽  
Silver Nanoparticles ◽  
Liquid Crystal ◽  
Dielectric Relaxation ◽  
Relaxation Process ◽  
Relaxation Times ◽  
Low Frequency ◽  
Bulk Liquid ◽  
Molecular Rearrangement ◽  
Relaxation Studies

This article reports on the Dielectric Relaxation Studies of two Liquid Crystalline compounds - 7O.4 and 7O.6 - doped with dodecanethiol capped Silver Nanoparticles. The liquid crystal molecules are aligned homeotropically using CTAB. The low frequency relaxation process occurring above 1 MHz is fitted to Cole-Cole formula using the software Dielectric Spectra fit. The effect of the Silver Nanoparticles on the molecular dipole dynamics are discussed in terms of the fitted relaxation times, Cole-Cole distribution parameter and activation energy. The study indicate a local molecular rearrangement of the liquid crystal molecules without affecting the order of the bulk liquid crystal molecules but these local molecules surrounding the Silver Nanoparticles do not contribute to the relaxation process in the studied frequency range. The observed effect on activation energy suggests a change in interaction between the nanoparticles/liquid crystal molecules.

Pt-Pd Nanoalloy for the Unprecedented Activation of Carbon-Fluorine Bond at Low Temperature

2019 ◽  
Author(s):  
Raghu Nath Dhital ◽  
keigo nomura ◽  
Yoshinori Sato ◽  
Setsiri Haesuwannakij ◽  
Masahiro Ehara ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Dft Calculations ◽  
Bond Activation ◽  
Mild Conditions ◽  
Selective Transformation ◽  
Rate Determining Step ◽  
Highly Active ◽  
Harsh Conditions ◽  
Reaction Profile

Carbon-Fluorine (C-F) bonds are considered the most inert organic functionality and their selective transformation under mild conditions remains challenging. Herein, we report a highly active Pt-Pd nanoalloy as a robust catalyst for the transformation of C-F bonds into C-H bonds at low temperature, a reaction that often required harsh conditions. The alloying of Pt with Pd is crucial to activate C-F bond. The reaction profile kinetics revealed that the major source of hydrogen in the defluorinated product is the alcoholic proton of 2-propanol, and the rate-determining step is the reduction of the metal upon transfer of the <i>beta</i>-H from 2-propanol. DFT calculations elucidated that the key step is the selective oxidative addition of the O-H bond of 2-propanol to a Pd center prior to C-F bond activation at a Pt site, which crucially reduces the activation energy of the C-F bond. Therefore, both Pt and Pd work independently but synergistically to promote the overall reaction

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