Time-Resolved Electron Paramagnetic Resonance and Theoretical Investigations of Metal-Free Room-Temperature Triplet Emitters

2017 ◽  
Vol 139 (37) ◽  
pp. 12968-12975 ◽  
Author(s):  
Hideto Matsuoka ◽  
Marius Retegan ◽  
Lisa Schmitt ◽  
Sigurd Höger ◽  
Frank Neese ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Room Temperature ◽  
Paramagnetic Resonance ◽  
Time Resolved ◽  
Metal Free ◽  
Theoretical Investigations ◽  
Electron Paramagnetic

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

Room Temperature Electron Paramagnetic Resonance (EPR) Signal Storage

1969 ◽  
Author(s):  
D.A. Bozanic ◽  
D.C. Buck ◽  
F.H. Harris ◽  
R.E. Huber ◽  
D. Mergerian ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Room Temperature ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Epr Signal ◽  
Electron Paramagnetic

Paramagnetic Defects in Benitoite

1991 ◽  
Vol 46 (7) ◽  
pp. 579-582 ◽  
Author(s):  
A. B. Vassilikou-Dova ◽  
K. Eftaxias
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Hyperfine Interaction ◽  
Relative Intensity ◽  
Room Temperature ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic ◽  
Magnetic Defects

Abstract In clear, blue, transparent bipyramidal crystals of the rare mineral benitoite, BaTiSi3O9, para­ magnetic defects have been investigated by electron paramagnetic resonance at room temperature and 9.43 GHz. They are attributed to Sn3+ and Fe3+ . A pair of satellites recorded for a wide angular rage around B0 || c (~40°) and a relative intensity of ~ 13% to the central signal is most likely due to hyperfine interaction with 117Sn and 119Sn isotopes. Attempts to bleach the colour of the crystal were unsuccessful.

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