scholarly journals Chemical Vapor Deposition Synthesis and Terahertz Photoconductivity of Low-Band-Gap N = 9 Armchair Graphene Nanoribbons

2017 ◽  
Vol 139 (10) ◽  
pp. 3635-3638 ◽  
Author(s):  
Zongping Chen ◽  
Hai I. Wang ◽  
Joan Teyssandier ◽  
Kunal S. Mali ◽  
Tim Dumslaff ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Graphene Nanoribbons ◽  
Chemical Vapor ◽  
Low Band Gap ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4864-4875 ◽  
Author(s):  
Robert M. Jacobberger ◽  
Ellen A. Murray ◽  
Matthieu Fortin-Deschênes ◽  
Florian Göltl ◽  
Wyatt A. Behn ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transport ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Graphene Nanoribbons ◽  
Chemical Vapor ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Aligned semiconducting armchair graphene nanoribbons with excellent charge transport properties are synthesized on vicinal Ge(001) substrates via chemical vapor deposition.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro ◽  
Aloysius F. Hepp ◽  
Philip P. Jenkins ◽  
Mark A. Stan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Direct Band Gap ◽  
Cuins2 Thin Films ◽  
Potential Applications ◽  
Direct Band

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Synthesis of Semiconducting Graphene Nanoribbons on Ge and Ge/Si via Chemical Vapor Deposition

2019 ◽  
Vol 93 (1) ◽  
pp. 129-132
Author(s):  
Robert M. Jacobberger ◽  
Austin J Way ◽  
Vivek Saraswat ◽  
Michael S Arnold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Graphene Nanoribbons ◽  
Chemical Vapor

Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition

1998 ◽  
Vol 83 (5) ◽  
pp. 2860-2862 ◽  
Author(s):  
S. Chichibu ◽  
M. Arita ◽  
H. Nakanishi ◽  
J. Nishio ◽  
L. Sugiura ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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