scholarly journals A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances

2016 ◽  
Vol 138 (20) ◽  
pp. 6368-6371 ◽  
Author(s):  
Eugene Yau-Hin Hong ◽  
Chun-Ting Poon ◽  
Vivian Wing-Wah Yam
Keyword(s):  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processable

Well-defined star-shaped donor–acceptor conjugated molecules for organic resistive memory devices

2015 ◽  
Vol 51 (75) ◽  
pp. 14179-14182 ◽  
Author(s):  
Hung-Chin Wu ◽  
Jicheng Zhang ◽  
Zhishan Bo ◽  
Wen-Chang Chen
Keyword(s):  
Charge Storage ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conjugated Molecules ◽  
Storage Materials ◽  
End Groups ◽  
Donor Acceptor ◽  
Solution Processable ◽  
First Time

Solution processable star-shaped donor–acceptor conjugated molecules are explored for the first time as charge storage materials for resistor-type memory devices with a triphenylamine (donor) core, and three 1.8-naphthalimide (acceptors) end-groups.

Manipulation of Push-Pull System by Functionalization of Porphyrin at β-Position for High-Performance Solution-Processable Ternary Resistive Memory Devices

ChemNanoMat ◽  
2017 ◽  
Vol 3 (3) ◽  
pp. 164-167 ◽  
Author(s):  
Hing Chan ◽  
Sai-Ho Lee ◽  
Chun-Ting Poon ◽  
Maggie Ng ◽  
Vivian Wing-Wah Yam
Keyword(s):  
High Performance ◽  
Memory Devices ◽  
Resistive Memory ◽  
Pull System ◽  
Solution Processable

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

2017 ◽  
Vol 16 (12) ◽  
pp. 1216-1224 ◽  
Author(s):  
Sreetosh Goswami ◽  
Adam J. Matula ◽  
Santi P. Rath ◽  
Svante Hedström ◽  
Surajit Saha ◽  
...  
Keyword(s):  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processable

scholarly journals Erratum: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

2018 ◽  
Vol 17 (1) ◽  
pp. 103-103 ◽  
Author(s):  
Sreetosh Goswami ◽  
Adam J. Matula ◽  
Santi P. Rath ◽  
Svante Hedström ◽  
Surajit Saha ◽  
...  
Keyword(s):  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processable

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Flicker Noise ◽  
Transition Metal Oxide ◽  
Memory Devices ◽  
Resistive Memory ◽  
Layered Transition Metal

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

2013 ◽  
Vol 23 (45) ◽  
pp. 5631-5637 ◽  
Author(s):  
David Brunel ◽  
Costin Anghel ◽  
Do-Yoon Kim ◽  
Saïd Tahir ◽  
Stéphane Lenfant ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Memory Devices ◽  
Resistive Memory

Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

2011 ◽  
Vol 1337 ◽  
Author(s):  
B.D. Briggs ◽  
S.M. Bishop ◽  
K.D. Leedy ◽  
B. Butcher ◽  
R. L. Moore ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Copper Concentration ◽  
Atomic Layer ◽  
Metal Electrode ◽  
Pulse Mode ◽  
Switching Behavior ◽  
Material Structure ◽  
Memory Devices ◽  
Resistive Memory

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.

scholarly journals Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices

2010 ◽  
Vol 518 (12) ◽  
pp. 3293-3298 ◽  
Author(s):  
S. Puthen Thermadam ◽  
S.K. Bhagat ◽  
T.L. Alford ◽  
Y. Sakaguchi ◽  
M.N. Kozicki ◽  
...  
Keyword(s):  
Memory Devices ◽  
Resistive Memory

NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment

2019 ◽  
Vol 480 ◽  
pp. 57-62 ◽  
Author(s):  
Xin Kang ◽  
Jiajun Guo ◽  
Yingjie Gao ◽  
Shuxia Ren ◽  
Wei Chen ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Memory Devices ◽  
Resistive Memory ◽  
Pre Treatment
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