Conformation, and Charge Tunneling through Molecules in SAMs

2021 ◽  
Author(s):  
Lee Belding ◽  
Samuel E. Root ◽  
Yuan Li ◽  
Junwoo Park ◽  
Mostafa Baghbanzadeh ◽  
...  
Keyword(s):  
Charge Tunneling

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

scholarly journals The Rate of Charge Tunneling through Self-Assembled Monolayers Is Insensitive to Many Functional Group Substitutions

2012 ◽  
Vol 124 (19) ◽  
pp. 4736-4739 ◽  
Author(s):  
Hyo Jae Yoon ◽  
Nathan D. Shapiro ◽  
Kyeng Min Park ◽  
Martin M. Thuo ◽  
Siowling Soh ◽  
...  
Keyword(s):  
Functional Group ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Charge Tunneling

scholarly journals Charge Transfer in Dimer with Dissipation

2019 ◽  
Vol 224 ◽  
pp. 03006
Author(s):  
Nadezhda Fialko ◽  
Maxim Olshevets ◽  
Victor Lakhno
Keyword(s):  
Charge Transfer ◽  
Charged Particle ◽  
Computer Modeling ◽  
Electron Energy ◽  
Small Radius ◽  
Memory Devices ◽  
Charge Motion ◽  
Transfer Processes ◽  
Holstein Model ◽  
Charge Tunneling

The study of the charge transfer processes in biomacromolecules such as DNA is essential for the development of nanobioelectronics, design and construction of DNA-based nanowires, memory devices, logical elements, etc. Mathematical and computer modeling of charge transfer in biopolymer chains is an important part of these investigations. Some properties of charge transfer can be demonstrated by modeling of two-site chain. Based on the semi-classical Holstein model we consider a system of two sites and charged particle (electron or hole) in which the oscillations of the first site are not related to the charge motion, and the parameters of the second site correspond to a small-radius polaron. The system steady states depending on the electron energy H at the second site are studied numerically. The dynamics of the charge initially localized at the first site is modeled. Various modes depending on H are demonstrated: charge tunneling, resonant transfer, and lack of transfer.

Memory in Single Emitter Fluorescence Blinking Reveals the Dynamic Character of Nanoscale Charge Tunneling

2008 ◽  
Vol 112 (9) ◽  
pp. 3417-3422 ◽  
Author(s):  
Jacob P. Hoogenboom ◽  
Jordi Hernando ◽  
María F. García-Parajó ◽  
Niek F. van Hulst
Keyword(s):  
Dynamic Character ◽  
Single Emitter ◽  
Fluorescence Blinking ◽  
Charge Tunneling

Negative Differential Resistance Characteristics of Silicon Nanocrystal Memory

2000 ◽  
Vol 609 ◽  
Author(s):  
Seung Jae Baik ◽  
Koeng Su Lim
Keyword(s):  
Quantum Dot ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Differential Resistance ◽  
Memory Device ◽  
Oxide Semiconductor ◽  
Si Quantum Dot ◽  
Charge Tunneling ◽  
Nanocrystal Memory ◽  
Average Size

ABSTRACTTwo-dimensional (2D) Si quantum dot array was fabricated by oxidation of microcrystalline Si film deposited by photo chemical vapor deposition (photo-CVD). Average size of Si quantum dot was estimated to be 2.4nm and dot density 7 ∼ 8 ×1011 cm−2. Nanocrystal memory device with this 2D quantum dot array demonstrated negative differential resistance characteristics and single charge tunneling phenomena, which was observed as stepwise decrease of gate transconductance. Interface states at the oxidized surface of quantum dots were assumed to explain temperature dependence characteristics. This new process is adequate for functional device application of nanocrystal metal-oxide-semiconductor (MOS) memory.

Charge tunneling and trapping in Er stabilized β-MnO2 films for memory applications

2014 ◽  
Vol 104 (26) ◽  
pp. 263508 ◽  
Author(s):  
Jian Cui ◽  
Ting Ji ◽  
Tianxiao Nie ◽  
Zuimin Jiang
Keyword(s):  
Charge Tunneling ◽  
Memory Applications
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