scholarly journals High-Quality 2D Metal−Organic Coordination Network Providing Giant Cavities within Mesoscale Domains

2009 ◽  
Vol 131 (11) ◽  
pp. 3881-3883 ◽  
Author(s):  
Dirk Kühne ◽  
Florian Klappenberger ◽  
Régis Decker ◽  
Uta Schlickum ◽  
Harald Brune ◽  
...  
Keyword(s):  
High Quality ◽  
Coordination Network ◽  
Metal Organic

A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)

2004 ◽  
Vol 267 (1-2) ◽  
pp. 140-144 ◽  
Author(s):  
A. Dadgar ◽  
N. Oleynik ◽  
D. Forster ◽  
S. Deiter ◽  
H. Witek ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Growth Method ◽  
Metal Organic

scholarly journals Engineering the metal–organic interface by transferring a high-quality single layer graphene on top of organic materials

Carbon ◽  
2015 ◽  
Vol 87 ◽  
pp. 78-86 ◽  
Author(s):  
Xuefei Feng ◽  
Liang Zhang ◽  
Yifan Ye ◽  
Yong Han ◽  
Qian Xu ◽  
...  
Keyword(s):  
Organic Materials ◽  
Single Layer ◽  
Single Layer Graphene ◽  
High Quality ◽  
Layer Graphene ◽  
Metal Organic

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

scholarly journals Extensive Screening of Green Solvents for Safe and Sustainable UiO-66 Synthesis

2020 ◽  
Author(s):  
Diletta Morelli Venturi ◽  
Filippo Campana ◽  
Fabio Marmottini ◽  
Ferdinando Costantino ◽  
Luigi Vaccaro
Keyword(s):  
Large Scale ◽  
Low Cost ◽  
Metal Organic Framework ◽  
Dimethyl Formamide ◽  
Scale Production ◽  
Green Solvents ◽  
High Quality ◽  
Color Code ◽  
Large Scale Production ◽  
Metal Organic

<p>Zirconium based Metal-Organic Framework UiO-66 is to date considered one of the benchmark compound among stable MOFs and it has attracted a huge attention for its employment in many strategic applications. Large scale production of UiO-66 for industrial purposes requires the use of safe and green solvents, fulfilling the green chemistry principles and able to replace the use of <i>N,N</i>-Dimethyl-Formamide (DMF), which, despite its toxicity, is still considered the most efficient solvent for obtaining UiO-66 of high quality. Herein we report on a survey of about 40 different solvents with different polarity, boiling point and acidity, used for the laboratory scale synthesis of high quality UiO-66 crystals. The solvents were chosen according the European REACH Regulation 1907/2006 among those having low cost, low toxicity and fully biodegradable. Concerning MOF synthesis, the relevant parameters chosen for establishing the quality of the results obtained are the degree are the crystallinity, microporosity and specific surface area, yield and solvent recyclability. Taking into account also the chemical physical properties of all the solvents, a color code was assigned in order to give a final green assessment for the UiO-66 synthesis. Defectivity of the obtained products, the use of acidic modulators and the use of alternative Zr-salts have been also taken into consideration. Preliminary results lead to conclude that GVL (γ-valerolactone) is among the most promising solvents for replacing DMF in UiO-66 MOF synthesis. </p>

scholarly journals Extensive Screening of Green Solvents for Safe and Sustainable UiO-66 Synthesis

2020 ◽  
Author(s):  
Diletta Morelli Venturi ◽  
Filippo Campana ◽  
Fabio Marmottini ◽  
Ferdinando Costantino ◽  
Luigi Vaccaro
Keyword(s):  
Large Scale ◽  
Low Cost ◽  
Metal Organic Framework ◽  
Dimethyl Formamide ◽  
Scale Production ◽  
Green Solvents ◽  
High Quality ◽  
Color Code ◽  
Large Scale Production ◽  
Metal Organic

<p>Zirconium based Metal-Organic Framework UiO-66 is to date considered one of the benchmark compound among stable MOFs and it has attracted a huge attention for its employment in many strategic applications. Large scale production of UiO-66 for industrial purposes requires the use of safe and green solvents, fulfilling the green chemistry principles and able to replace the use of <i>N,N</i>-Dimethyl-Formamide (DMF), which, despite its toxicity, is still considered the most efficient solvent for obtaining UiO-66 of high quality. Herein we report on a survey of about 40 different solvents with different polarity, boiling point and acidity, used for the laboratory scale synthesis of high quality UiO-66 crystals. The solvents were chosen according the European REACH Regulation 1907/2006 among those having low cost, low toxicity and fully biodegradable. Concerning MOF synthesis, the relevant parameters chosen for establishing the quality of the results obtained are the degree are the crystallinity, microporosity and specific surface area, yield and solvent recyclability. Taking into account also the chemical physical properties of all the solvents, a color code was assigned in order to give a final green assessment for the UiO-66 synthesis. Defectivity of the obtained products, the use of acidic modulators and the use of alternative Zr-salts have been also taken into consideration. Preliminary results lead to conclude that GVL (γ-valerolactone) is among the most promising solvents for replacing DMF in UiO-66 MOF synthesis. </p>

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 1014 ◽  
pp. 22-26
Author(s):  
Yi Zhuo ◽  
Zi Min Chen ◽  
Sheng Dong Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this work, In2O3 thin films were grown on (111) yttria-stabilized zirconia (YSZ) by metal-organic chemical vapor deposition (MOCVD) at different temperature. It is found that samples grown at low temperature showed lower residual stress but higher mosaicity while high growth temperatures could also cause deterioration in crystal quality due to increasing lattice mismatch. To obtain high quality In2O3 film with low residual strain, a 30-nm thick layer grown at 530 °C was introduced as buffer layer, considering both stress relaxation and crystalline mosaicity. By using two-step growth method, a 400 nm-thick, high quality, near-strain-free In2O3 thin film with the full width at half maximum (FWHM) values of (222) diffraction peaks being as narrow as 648 arcsec was successfully obtained.

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