Electron Dynamics in Charge-Transfer-to-Solvent States of Aqueous Chloride Revealed by Cl−2p Resonant Auger-Electron Spectroscopy

2008 ◽  
Vol 130 (22) ◽  
pp. 7130-7138 ◽  
Author(s):  
Bernd Winter ◽  
Emad F. Aziz ◽  
Niklas Ottosson ◽  
Manfred Faubel ◽  
Nobuhiro Kosugi ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Electron Dynamics ◽  
Aqueous Chloride

ADSORPTION OF C60 ON Li-COVERED Ni(110) SURFACES

2003 ◽  
Vol 10 (01) ◽  
pp. 73-79 ◽  
Author(s):  
V. SALTAS ◽  
C. A. PAPAGEORGOPOULOS
Keyword(s):  
Charge Transfer ◽  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Low Energy ◽  
Vacuum Deposition ◽  
Low Energy Electron Diffraction ◽  
Rough Approximation ◽  
Low Energy Electron

In this paper the adsorption of C60 on Li-covered Ni(110) surfaces is investigated by means of Auger electron spectroscopy, low-energy electron diffraction and work function measurements, in ultrahigh vacuum. Deposition of C60 on the 1 × 2 Li-induced Ni(110) surface at 650 K causes the formation of islands with a 4 × 2 structure, where the C60 molecules adsorb along neighboring troughs of the substrate. At higher C60 coverages, the Li-induced 1 × 2 reconstruction of the Ni(110) surface is lifted and a 9 × 3 structure is formed, which finally ends in a semihexagonal structure, as in the case of C60 adsorption on clean Ni(110) surfaces. AES and LEED measurements suggest that charge is transferred from Li to the C60 molecules, which in a rough approximation was estimated to be around one electron per C60 molecule. The above estimated charge transfer to the C60 molecules is substantially smaller than that we have calculated when Li is adsorbed on C60-covered Ni(110) surfaces. Apparently, the order of Li and C60 deposition is very important for the charge transfer and the deposition of Li on C60-covered surfaces provides a substantially greater amount of charge to the C60 molecules.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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