scholarly journals A Highly Efficient Silole-Containing Dithienylethene with Excellent Thermal Stability and Fatigue Resistance: A Promising Candidate for Optical Memory Storage Materials

2014 ◽  
Vol 136 (49) ◽  
pp. 16994-16997 ◽  
Author(s):  
Jacky Chi-Hung Chan ◽  
Wai Han Lam ◽  
Vivian Wing-Wah Yam
2020 ◽  
Vol 8 (30) ◽  
pp. 15122-15129
Author(s):  
Fei Wen ◽  
Lin Zhang ◽  
Ping Wang ◽  
Lili Li ◽  
Jianguo Chen ◽  
...  

An ABS film, which exhibits a high gravimetric energy density of 6.3 J g−1 with satisfactory efficiency, excellent thermal stability, and cycling reliability at elevated temperatures, is a promising candidate for high power energy storage capacitors.


2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Peipei Dang ◽  
Guogang Li ◽  
Xiaohan Yun ◽  
Qianqian Zhang ◽  
Dongjie Liu ◽  
...  

AbstractRed phosphor materials play a key role in improving the lighting and backlit display quality of phosphor-converted white light-emitting diodes (pc-WLEDs). However, the development of a red phosphor with simultaneous high efficiency, excellent thermal stability and high colour purity is still a challenge. In this work, unique non-concentration quenching in solid-solution Cs3Gd1 − xGe3O9:xEu3+ (CGGO:xEu3+) (x = 0.1–1.0) phosphors is successfully developed to achieve a highly efficient red-emitting Cs3EuGe3O9 (CEGO) phosphor. Under the optimal 464 nm blue light excitation, CEGO shows a strong red emission at 611 nm with a high colour purity of 95.07% and a high internal quantum efficiency of 94%. Impressively, this red-emitting CEGO phosphor exhibits a better thermal stability at higher temperatures (175–250 °C, >90%) than typical red K2SiF6:Mn4+ and Y2O3:Eu3+ phosphors, and has a remarkable volumetric negative thermal expansion (coefficient of thermal expansion, α = −5.06 × 10−5/°C, 25–250 °C). By employing this red CEGO phosphor, a fabricated pc-WLED emits warm white light with colour coordinates (0.364, 0.383), a high colour rendering index (CRI = 89.7), and a low colour coordinate temperature (CCT = 4508 K). These results indicate that this highly efficient red-emitting phosphor has great potential as a red component for pc-WLEDs, opening a new perspective for developing new phosphor materials.


2021 ◽  
Vol 52 (5) ◽  
pp. 16-19
Author(s):  
Annalisa Bruno

In the last decade perovskite solar cells have shown remarkable improvements in power conversion efficiency which have driven the interest to commercialise the perovskite technology. Here, I will present an overview of our recent works focused on the development and the understanding of highly efficient co-evaporated perovskite solar cells with excellent thermal stability and remarkable upscalability. Our works demonstrate the compatibility of perovskite technology with consolidated industrial processes and its potential for next-generation photovoltaics on the market


2008 ◽  
Vol 1079 ◽  
Author(s):  
Kazuya Okubo ◽  
Kazuo Kawamura ◽  
Shinich Akiyama ◽  
Yasutoshi Kotaka ◽  
Tsukasa Itani ◽  
...  

ABSTRACTWe report NiSi and Ni(Pt)Si films with excellent thermal stability showing a particular crystal orientation on Si(001). The Ni-silicide film with a deposition temperature of about 200 °C consists of a conformal domain structure. We examined detail crystallographic analysis of silicide and clarified the psudo-epitaxial growth of NiSi(202)//Si(220) [or NiSi(211)//Si(220)] was the key scheme of superior thermal stability. By using this optimized Ni-silicide formation process, we have fabricated Ni-silicide that is thermally stable up to 650 °C and shows low fluctuation in sheet resistance and low leakage current in electrical measurements. This process is a promising candidate for future silicidation technology.


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


Author(s):  
Lu Wang ◽  
Shengdong Sun ◽  
Huajie Luo ◽  
Yang Ren ◽  
Hui Liu ◽  
...  

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...


2021 ◽  
Author(s):  
Yan-Lei Lu ◽  
Wen-Long Lan ◽  
Wei Shi ◽  
Qionghua Jin ◽  
Peng Cheng

Photo-induced variation of magnetism from ligand-based electron transfer have been extensively studied because of their potential applications in magneto-optical memory devices, light-responsive switches, and high-density information storage materials. In this...


Author(s):  
Seiya Shimono ◽  
Taichi Izaki ◽  
Nagisa Tanaka ◽  
Yasushi Nanai ◽  
Takaaki Morimoto ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document