Quantitative Correlation between Defect Density and Heterogeneous Electron Transfer Rate of Single Layer Graphene

2014 ◽  
Vol 136 (47) ◽  
pp. 16609-16617 ◽  
Author(s):  
Jin-Hui Zhong ◽  
Jie Zhang ◽  
Xi Jin ◽  
Jun-Yang Liu ◽  
Qiongyu Li ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Transfer Rate ◽  
Defect Density ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Electron Transfer Rate ◽  
Quantitative Correlation ◽  
Layer Graphene ◽  
Heterogeneous Electron Transfer

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

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