Synthesis, Structures, and Electronic Properties of Triple- and Double-Decker Ruthenocenes Incorporated by a Group 14 Metallole Dianion Ligand

2014 ◽  
Vol 136 (37) ◽  
pp. 13059-13064 ◽  
Author(s):  
Takuya Kuwabara ◽  
Jing-Dong Guo ◽  
Shigeru Nagase ◽  
Takahiro Sasamori ◽  
Norihiro Tokitoh ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Group 14 ◽  
Double Decker

scholarly journals 1JCH couplings in Group 14/IVA tetramethyls from the gas-phase NMR and DFT structural study: a search for the best computational protocol

2014 ◽  
Vol 16 (29) ◽  
pp. 15699-15708 ◽  
Author(s):  
Ryszard B. Nazarski ◽  
Włodzimierz Makulski
Keyword(s):  
Dft Calculations ◽  
Electronic Properties ◽  
Gas Phase ◽  
Structural Study ◽  
Group 14 ◽  
Computational Protocol ◽  
Isolated Molecules

The gas-phase 1J0,CHs in ‘isolated’ molecules of EMe4 were determined and discussed in terms of their geometric/electronic properties obtained from DFT calculations.

scholarly journals Preservation of electronic properties of double-decker complexes on metallic supports

2017 ◽  
Vol 19 (12) ◽  
pp. 8282-8287 ◽  
Author(s):  
B. Cirera ◽  
J. Matarrubia ◽  
T. Kaposi ◽  
N. Giménez-Agulló ◽  
M. Paszkiewicz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Self Assembly ◽  
Metal Surfaces ◽  
The Self ◽  
Double Decker

We report a multi-method study of the self-assembly and electronic invariance of double-decker complexes on distinct metal surfaces.

Low-temperature scanning tunneling microscopy study on the electronic properties of a double-decker DyPc2 molecule at the surface

2015 ◽  
Vol 17 (40) ◽  
pp. 27019-27026 ◽  
Author(s):  
Yajie Zhang ◽  
Peilin Liao ◽  
Jinglan Kan ◽  
Cen Yin ◽  
Na Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Double Decker ◽  
Constant Height ◽  
Temperature Scanning ◽  
Scanning Tunneling Microscopy Study

Inaccessibility of the Dy 4f states in the double-decker DyPc2 molecule, as evidenced by dI/dV mapping in the constant height mode.

Electronic Properties of Endohedral Clusters of Group 14

2016 ◽  
pp. 181-197 ◽  
Author(s):  
Vaida Arcisauskaite ◽  
Xiao Jin ◽  
José M. Goicoechea ◽  
John E. McGrady
Keyword(s):  
Electronic Properties ◽  
Group 14 ◽  
Endohedral Clusters

Tuning the Gap: Electronic Properties and Radical-Type Reactivities of Heteronuclear [1.1.1]Propellanes of Heavier Group 14 Elements

2011 ◽  
Vol 30 (6) ◽  
pp. 1419-1428 ◽  
Author(s):  
Dominik Nied ◽  
Pascual Oña-Burgos ◽  
Wim Klopper ◽  
Frank Breher
Keyword(s):  
Electronic Properties ◽  
Group 14 ◽  
Group 14 Elements ◽  
Radical Type

A Tem Study of Slip Systems in MoSi2/WSi2 Alloys

1991 ◽  
Vol 49 ◽  
pp. 942-943
Author(s):  
Stuart A. Maloy
Keyword(s):  
Solid Solution ◽  
Solid Solution Hardening ◽  
Slip Systems ◽  
High Melting ◽  
Group 14 ◽  
Solution Hardening ◽  
Brittle To Ductile Transition ◽  
High Melting Temperature ◽  
Tetragonal Unit Cell ◽  
Structural Applications

MoSi2 has recently been investigated as a potential material for high temperature structural applications. It has excellent oxidation resistance up to 1700°C, a high melting temperature, 2030°C, and a brittle-to-ductile transition temperature at 900-1000°C. WSi2 is isomorphous with MoSi2 and has a body-centered tetragonal unit cell of the space group 14/mmm. The lattice parameters are a=3.20 Å and c=7.84 Å for MoSi2 and a=3.21 Å and c=7.88 Å for WSi2. Therefore, WSi2 was added to MoSi2 to improve its strength via solid solution hardening. The purpose of this study was to investigate the slip systems in polycrystalline MoSi2/WSi2 alloys.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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