Application of a Mild Hydrothermal Approach Containing an in Situ Reduction Step to the Growth of Single Crystals of the Quaternary U(IV)-Containing Fluorides Na4MU6F30 (M = Mn2+, Co2+, Ni2+, Cu2+, and Zn2+) Crystal Growth, Structures, and Magnetic Properties

2014 ◽  
Vol 136 (10) ◽  
pp. 3955-3963 ◽  
Author(s):  
Jeongho Yeon ◽  
Mark D. Smith ◽  
Joshua Tapp ◽  
Angela Möller ◽  
Hans-Conrad zur Loye
Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 378
Author(s):  
Li Zhao ◽  
Zhiwei Hu ◽  
Hanjie Guo ◽  
Christoph Geibel ◽  
Hong-Ji Lin ◽  
...  

We report on the synthesis and physical properties of cm-sized CoGeO3 single crystals grown in a high pressure mirror furnace at pressures of 80 bar. Direction dependent magnetic susceptibility measurements on our single crystals reveal highly anisotropic magnetic properties that we attribute to the impact of strong single ion anisotropy appearing in this system with TN∼33.5 K. Furthermore, we observe effective magnetic moments that are exceeding the spin only values of the Co ions, which reveals the presence of sizable orbital moments in CoGeO3.


CrystEngComm ◽  
2014 ◽  
Vol 16 (2) ◽  
pp. 277-286 ◽  
Author(s):  
Shuijin Lei ◽  
Lei Liu ◽  
Chunying Wang ◽  
Xiaolian Shen ◽  
Chuanning Wang ◽  
...  

ChemPlusChem ◽  
2013 ◽  
Vol 78 (6) ◽  
pp. 481-485 ◽  
Author(s):  
Shichao Du ◽  
Zhiyu Ren ◽  
Yang Qu ◽  
Jian-qiang Wang ◽  
Lingjun Kong ◽  
...  

2007 ◽  
Vol 307 (2) ◽  
pp. 341-347 ◽  
Author(s):  
Xinming Huang ◽  
Satoshi Uda ◽  
Hideyoshi Tanabe ◽  
Nobuyuki Kitahara ◽  
Hisao Arimune ◽  
...  

Author(s):  
V. Yu. Kolosov

Electron beam (e-beam) annealing is powerful method for local modifying and crystallization in desired modes of semiconductors and microelectronics components and is also interesting for information storing. Nevertheless, discussed in many papers mechanism of explosive crystallization of amorphous (a-Ge, a-Si) films is still not clear enough and requires new structure studies. It is more relevant for recently discovered growing of micro-crystals with strong internal lattice bending (gradient crystals) in some amorphous films. This paper reports our findings in the structure of spots crystallized in these unusual modes by TEM beam in vacuum deposited (Ge, Se, Se-Te) or prepared by pyrolysis (Fe2O3) unsupported amorphous films. Bendcontour technique was used to analyze the fields of lattice orientation for gradient crystals, including in situ crystal growth studies or videorecord analysis.Explosively crystallized spots in a-Ge, a-Si films are known to consist of 3 zones, Fig. 1. We observed the same zones for films 400-800Å thick, deposited at rates 1- 100Å/s: polycrystal central zone (O), surrounded by a fan of radially elongated single crystals (zone R) which in turn is surrounded by zone (C), formed by concentric or spiral shells (each subdivided into single-crystal subshell and polycrystal subshell).


2018 ◽  
Vol 260 ◽  
pp. 80-86 ◽  
Author(s):  
Dileka Abeysinghe ◽  
Mark D. Smith ◽  
Gregory Morrison ◽  
Jeongho Yeon ◽  
Hans-Conrad zur Loye

ACS Omega ◽  
2020 ◽  
Vol 5 (27) ◽  
pp. 16584-16594 ◽  
Author(s):  
Si Wu ◽  
Yinghao Zhu ◽  
Haoshi Gao ◽  
Yinguo Xiao ◽  
Junchao Xia ◽  
...  

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