scholarly journals Synthesis of Uniform Disk-Shaped Copper Telluride Nanocrystals and Cation Exchange to Cadmium Telluride Quantum Disks with Stable Red Emission

2013 ◽  
Vol 135 (33) ◽  
pp. 12270-12278 ◽  
Author(s):  
Hongbo Li ◽  
Rosaria Brescia ◽  
Mauro Povia ◽  
Mirko Prato ◽  
Giovanni Bertoni ◽  
...  
Keyword(s):  
Cation Exchange ◽  
Cadmium Telluride ◽  
Red Emission ◽  
Copper Telluride ◽  
Quantum Disks ◽  
Uniform Disk

ChemInform Abstract: Synthesis of Uniform Disk-Shaped Copper Telluride Nanocrystals and Cation Exchange to Cadmium Telluride Quantum Disks with Stable Red Emission.

ChemInform ◽  
2013 ◽  
Vol 44 (52) ◽  
pp. no-no
Author(s):  
Hongbo Li ◽  
Rosaria Brescia ◽  
Mauro Povia ◽  
Mirko Prato ◽  
Giovanni Bertoni ◽  
...  
Keyword(s):  
Cation Exchange ◽  
Cadmium Telluride ◽  
Red Emission ◽  
Copper Telluride ◽  
Quantum Disks ◽  
Uniform Disk

scholarly journals Influence of the Ion Coordination Number on Cation Exchange Reactions with Copper Telluride Nanocrystals

2016 ◽  
Vol 138 (22) ◽  
pp. 7082-7090 ◽  
Author(s):  
Renyong Tu ◽  
Yi Xie ◽  
Giovanni Bertoni ◽  
Aidin Lak ◽  
Roberto Gaspari ◽  
...  
Keyword(s):  
Cation Exchange ◽  
Coordination Number ◽  
Exchange Reactions ◽  
Copper Telluride

Highly efficient red phosphor Cs2GeF6:Mn4+for warm white light-emitting diodes

RSC Advances ◽  
2015 ◽  
Vol 5 (100) ◽  
pp. 82409-82414 ◽  
Author(s):  
Zhengliang Wang ◽  
Yayun Zhou ◽  
Yong Liu ◽  
Qiang Zhou ◽  
Lijun Luo ◽  
...  
Keyword(s):  
Cation Exchange ◽  
White Light ◽  
Light Emitting Diodes ◽  
Exchange Method ◽  
Red Phosphor ◽  
Red Emission ◽  
Light Emitting ◽  
Highly Efficient ◽  
Warm White Light ◽  
White Light Emitting Diodes

Red phosphor Cs2GeF6:Mn4+synthesized by the cation exchange method exhibits an intense red emission with a high colour-purity. The warm WLED fabricated with this phosphor emits an intense white light under 20 mA current excitation.

Colour Photometry of the Solar Corona of July 11, 1991

1994 ◽  
Vol 144 ◽  
pp. 597-599 ◽  
Author(s):  
I. V. Alexeyeva ◽  
N. L. Kroussanova ◽  
M. V. Streltsova
Keyword(s):  
Solar Corona ◽  
Red Emission ◽  
Coronal Structures

AbstractThe results of photometry of colour positives of the solar corona of July 11, 1991 are presented. Observations of the white corona were made without radial niters in Jojutla (Mexico). Dependences of coronal brightness on distance in the red (640 nm) and blue (420 nm) wavelength intervals are deduced for different coronal structures up to 3.0-3.5R⊙. The effect of ”reddening“ is noted. The excess of the red emission to the blue one (I640nm/I420nm) is found to be 1.20 and 1.17 at distance of 2.2R⊙for the N-E helmet streamer (P ≃ 37°) and the N-W region of low brightness (P ≃ 339°), respectively.

Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies

1974 ◽  
Vol 32 ◽  
pp. 548-549
Author(s):  
T. J. Magee ◽  
J. Peng ◽  
J. Bean
Keyword(s):  
Electron Microscope ◽  
Sulfuric Acid ◽  
Solid State ◽  
Sample Preparation ◽  
Cadmium Telluride ◽  
Potassium Dichromate ◽  
Optical Components ◽  
The Past ◽  
Solid State Devices

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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