General Rules for Selective Growth of Enriched Semiconducting Single Walled Carbon Nanotubes with Water Vapor as in Situ Etchant

2012 ◽  
Vol 134 (34) ◽  
pp. 14019-14026 ◽  
Author(s):  
Weiwei Zhou ◽  
Shutong Zhan ◽  
Lei Ding ◽  
Jie Liu
Keyword(s):  
Carbon Nanotubes ◽  
Water Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Selective Growth ◽  
Single Walled Carbon ◽  
General Rules ◽  
Walled Carbon Nanotubes

Selective Growth of Semiconducting Single-Walled Carbon Nanotubes by “In Situ” Methods

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 109-116
Author(s):  
Chengzhi Luo ◽  
Chunxu Pan
Keyword(s):  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Selective Growth ◽  
Electronic Circuits ◽  
Optimal Method ◽  
Single Walled Carbon ◽  
General Guideline ◽  
In Situ Methods ◽  
Walled Carbon Nanotubes

ABSTRACT Single-walled carbon nanotubes (SWNTs) possess superior electronic properties that make them ideal candidates for making next-generation electronic circuits. However, the commercially available SWNTs that obtained directly from the viable synthesis procedures are the mixtures of semiconducting (s-) and metallic (m-) SWNTs. That shortcoming of present technologies hinders further studies and limits the scalable applications for a series of promising SWNT-based electronics. Separation of the two species is the way to solve the present dilemma. Herein, this review highlights “in situ” approaches towards selective growth of s-SWNT. The methods and techniques used for the enrichment of s-SWNTs are reviewed. Based on the understanding of the growth mechanism of those strategies, we try to propose the general guideline on that how can we develop the optimal method for the growth of s-SWNTs.

DIRECTED GROWTH OF SINGLE-WALLED CARBON NANOTUBES

2002 ◽  
Vol 01 (03n04) ◽  
pp. 197-204 ◽  
Author(s):  
LANCE DELZEIT ◽  
RAMSEY STEVENS ◽  
CATTIEN NGUYEN ◽  
M. MEYYAPPAN
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Horizontal Plane ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Thermal Chemical Vapor Deposition ◽  
Single Walled Carbon ◽  
Directed Growth ◽  
Walled Carbon Nanotubes

Single-walled carbon nanotubes (SWNTs) are grown by thermal chemical vapor deposition at 900°C using methane. Application of an electric field (0.4 V/μm) in situ during the growth process results in directed growth of SWNTs on a horizontal plane bridging a distance as long as 25 μm. This approach is useful in the fabrication of nanotube based transistors.

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