Multiple Functionalities of Polyfluorene Grafted with Metal Ion-Intercalated Crown Ether as an Electron Transport Layer for Bulk-Heterojunction Polymer Solar Cells: Optical Interference, Hole Blocking, Interfacial Dipole, and Electron Conduction

2012 ◽  
Vol 134 (35) ◽  
pp. 14271-14274 ◽  
Author(s):  
Sih-Hao Liao ◽  
Yi-Lun Li ◽  
Tzu-Hao Jen ◽  
Yu-Shan Cheng ◽  
Show-An Chen
Solar RRL ◽  
2018 ◽  
Vol 2 (8) ◽  
pp. 1800086 ◽  
Author(s):  
Youn Hwan Kim ◽  
Dong Geun Kim ◽  
Ratna Dewi Maduwu ◽  
Ho Cheol Jin ◽  
Doo Kyung Moon ◽  
...  

2018 ◽  
Vol 18 (5) ◽  
pp. 505-511 ◽  
Author(s):  
Cheng Xu ◽  
Matthew Wright ◽  
Naveen Kumar Elumalai ◽  
Md Arafat Mahmud ◽  
Dian Wang ◽  
...  

2018 ◽  
Vol 6 (27) ◽  
pp. 12969-12973 ◽  
Author(s):  
Zhiquan Zhang ◽  
Zheling Zhang ◽  
Bin Zhao ◽  
Youhuan Huang ◽  
Jian Xiong ◽  
...  

A low-cost polymer PEIE–DIO without any conjugated units has been prepared as a thickness-insensitive ETL for inverted polymer solar cells.


2015 ◽  
Vol 26 ◽  
pp. 487-494 ◽  
Author(s):  
Haiyan Fu ◽  
Bing Li ◽  
Xiangchuan Meng ◽  
Licheng Tan ◽  
Xingxing Shen ◽  
...  

2020 ◽  
Vol 860 ◽  
pp. 28-33
Author(s):  
Rany Khaeroni ◽  
Herman ◽  
Priastuti Wulandari

In recent years, perovskite material has been extensively studied due to its unique physical properties and promising application in the third generation of solar cells. In particular, Sn-based perovskite has been considered to replace Pb-based perovskite because of the toxic effects and it can lead to other serious problems related to the environment. Cs2SnI6 perovskite has been known to be synthesized in a simple chemical process and it can be produced on a large scale. Moreover, this material is also oxygen and moisture stable due to the high oxidation state of tin. In this study, we synthesize air-stable Cs2SnI6 perovskite by the use of the wet chemical process at room temperature. Next, we attempt to fabricate the inverted bulk heterojunction solar cells incorporated Cs2SnI6 as electron transport layer in the configuration of ITO/ZnO/Cs2SnI6/P3HT:PCBM/PEDOT:PSS/Ag to improve device performance. The Cs2SnI6 perovskite shows an Fm-3m space group with a cubic lattice parameter of 11.62Å confirmed by X-Ray Diffraction (XRD) measurement, while UV-Vis measurement indicates this type of perovskite has direct band gap ~3.1 eV. The fabricated solar cell device reveals the enhancement in current density at short circuit condition (Jsc) from 64.69 mA/cm2 to 77.02 mA/cm2 with the addition of 2.25 mg/ml Cs2SnI6 along with the enhancement of power conversion efficiency (PCE) from 7.05% to 9.75% as characterized by J-V measurement. In our case, the voltage at open circuit condition (Voc) of the device does not perform significant improvement. Besides, it is found that the solar cell devices are quite stable even after exposure in the air for six weeks after fabrication, as indicated by PCE performance.


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