Label-Free Biosensors Based on Aptamer-Modified Graphene Field-Effect Transistors

2010 ◽  
Vol 132 (51) ◽  
pp. 18012-18013 ◽  
Author(s):  
Yasuhide Ohno ◽  
Kenzo Maehashi ◽  
Kazuhiko Matsumoto
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Label Free ◽  
Modified Graphene

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

Valinomycin-Modified Graphene Field-Effect Transistors for Potassium Ion Sensors

2011 ◽  
Author(s):  
Y. Sofue ◽  
Y. Ohno ◽  
K. Maehashi ◽  
K. Inoue ◽  
K. Matsumoto
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Potassium Ion ◽  
Ion Sensors ◽  
Modified Graphene

Selective ion sensors based on ionophore-modified graphene field-effect transistors

2013 ◽  
Vol 187 ◽  
pp. 45-49 ◽  
Author(s):  
Kenzo Maehashi ◽  
Yasuyuki Sofue ◽  
Shogo Okamoto ◽  
Yasuhide Ohno ◽  
Koichi Inoue ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Sensors ◽  
Modified Graphene

scholarly journals Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sooraj Sanjay ◽  
Mainul Hossain ◽  
Ankit Rao ◽  
Navakanta Bhat
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of Care ◽  
Low Cost ◽  
Ph Sensor ◽  
Detection Sensitivity ◽  
Label Free ◽  
Back Gate ◽  
Dielectric Thickness ◽  
Label Free Detection

AbstractIon-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs have been shown to enhance detection sensitivity beyond the Nernst limit of 59 mV pH−1 when the back gate dielectric is much thicker than the top dielectric. However, the thicker back-dielectric limits its application for ultrascaled point-of-care devices. In this work, we introduce and demonstrate a pH sensor, with WSe2(top)/MoS2(bottom) heterostructure based double gated ISFET. The proposed device is capable of surpassing the Nernst detection limit and uses thin high-k hafnium oxide as the gate oxide. The 2D atomic layered structure, combined with nanometer-thick top and bottom oxides, offers excellent scalability and linear response with a maximum sensitivity of 362 mV pH−1. We have also used technology computer-aided (TCAD) simulations to elucidate the underlying physics, namely back gate electric field screening through channel and interface charges due to the heterointerface. The proposed mechanism is independent of the dielectric thickness that makes miniaturization of these devices easier. We also demonstrate super-Nernstian behavior with the flipped MoS2(top)/WSe2(bottom) heterostructure ISFET. The results open up a new pathway of 2D heterostructure engineering as an excellent option for enhancing ISFET sensitivity beyond the Nernst limit, for the next-generation of label-free biosensors for single-molecular detection and point-of-care diagnostics.

scholarly journals Label-Free Sub-picomolar Protein Detection with Field-Effect Transistors

2010 ◽  
Vol 82 (9) ◽  
pp. 3531-3536 ◽  
Author(s):  
Pedro Estrela ◽  
Debjani Paul ◽  
Qifeng Song ◽  
Lukas K. J. Stadler ◽  
Ling Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Protein Detection ◽  
Label Free

CMOS-Compatible Silicon Nanowire Field-Effect Transistors for Ultrasensitive and Label-Free MicroRNAs Sensing

Small ◽  
2014 ◽  
Vol 10 (10) ◽  
pp. 2022-2028 ◽  
Author(s):  
Na Lu ◽  
Anran Gao ◽  
Pengfei Dai ◽  
Shiping Song ◽  
Chunhai Fan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Cmos Compatible

Label-Free DNA Sensors Based on Field-Effect Transistors with Semiconductor of Carbon Materials

2015 ◽  
Vol 33 (8) ◽  
pp. 828-841 ◽  
Author(s):  
Lu Zhao ◽  
Dapeng Cao ◽  
Zhiqiang Gao ◽  
Baoxiu Mi ◽  
Wei Huang
Keyword(s):  
Field Effect ◽  
Carbon Materials ◽  
Field Effect Transistors ◽  
Label Free ◽  
Dna Sensors ◽  
Free Dna
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