scholarly journals Synthesis and Characterization of Manganese-Doped Silicon Nanoparticles:  Bifunctional Paramagnetic-Optical Nanomaterial

2007 ◽  
Vol 129 (35) ◽  
pp. 10668-10669 ◽  
Author(s):  
Xiaoming Zhang ◽  
Marcin Brynda ◽  
R. David Britt ◽  
Elizabeth C. Carroll ◽  
Delmar S. Larsen ◽  
...  
2020 ◽  
Vol MA2020-01 (16) ◽  
pp. 1059-1059
Author(s):  
Gérald Ferblantier ◽  
Fabien Ehrhardt ◽  
Yann Le Gall ◽  
Dominique Muller ◽  
Daniel Mathiot

ChemInform ◽  
2010 ◽  
Vol 30 (22) ◽  
pp. no-no
Author(s):  
John St. John ◽  
Jeffery L. Coffer ◽  
Yandong Chen ◽  
Russell F. Pinizzotto

1999 ◽  
Vol 121 (9) ◽  
pp. 1888-1892 ◽  
Author(s):  
John St. John ◽  
Jeffery L. Coffer ◽  
Yandong Chen ◽  
Russell F. Pinizzotto

2014 ◽  
Vol 14 (8) ◽  
pp. 5983-5987 ◽  
Author(s):  
Hayoung Kwon ◽  
Eunhee Lim ◽  
Sungkoo Lee ◽  
Kyeong K. Lee

Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.


1996 ◽  
Vol 61 (10) ◽  
pp. 3572-3572
Author(s):  
Lawrence T. Scott ◽  
Atena Necula

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