Photogenerated Hole Mobility in DNA Measured by Time-Resolved Microwave Conductivity

2006 ◽  
Vol 128 (7) ◽  
pp. 2212-2213 ◽  
Author(s):  
Ryuhei Yamagami ◽  
Kazuo Kobayashi ◽  
Akinori Saeki ◽  
Shu Seki ◽  
Seiichi Tagawa
Keyword(s):  
Hole Mobility ◽  
Microwave Conductivity ◽  
Time Resolved ◽  
Photogenerated Hole

Optoelektronic Properties of CuGaSe2 Thin Films Studied by Time-resolved Microwave Conductivity

2003 ◽  
Vol 763 ◽  
Author(s):  
A. Meeder ◽  
D. Fuertes Marrón ◽  
M. Ch. Lux-Steiner ◽  
M. Kunst
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Charge Carrier Transport ◽  
Back Side ◽  
Defect Model ◽  
Microwave Conductivity ◽  
Time Resolved ◽  
Layer Defect

AbstractApplying the (contactless) time-resolved microwave conductivity technique (TRMC) to CVD- and PVD-grown device grade CuGaSe2 thin films experimental data of hole mobility and lifetime are obtained. TRMC data of stoichiometric and Gallium-rich, front and back side illuminated thin films are presented. In the Gallium-rich samples an extended decay over several orders of magnitude is observed. In the stoichiometric samples the majority of excess carriers decays nearly instantaneously. Differences in charge carrier transport at the front and the back side are discussed in the framework of a two layer defect model, previously reported in such absorber layers.

Straight, bent and twisted intramolecular charge separated states as seen by time-resolved microwave conductivity (TRMC)

1993 ◽  
Vol 65 (8) ◽  
pp. 1723-1728 ◽  
Author(s):  
J. M. Warman ◽  
S. A. Jonker ◽  
W. Schuddeboom ◽  
M. P. de Haas ◽  
M. N. Paddon-Row ◽  
...  
Keyword(s):  
Microwave Conductivity ◽  
Time Resolved

Time-resolved Photoconductivity as a Probe of Carrier Transport in Microcrystalline Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Steve Reynolds
Keyword(s):  
Density Of States ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Film Growth ◽  
Hole Mobility ◽  
Transport Parameters ◽  
Microcrystalline Silicon ◽  
Time Resolved ◽  
Transient Photoconductivity ◽  
Transport Measurements

AbstractThe use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.

scholarly journals Time-resolved microwave conductivity. Part 1.—TiO2photoreactivity and size quantization

1994 ◽  
Vol 90 (21) ◽  
pp. 3315-3322 ◽  
Author(s):  
Scot T. Martin ◽  
Hartmut Herrmann ◽  
Wonyong Choi ◽  
Michael R. Hoffmann
Keyword(s):  
Size Quantization ◽  
Microwave Conductivity ◽  
Time Resolved

Charge migration in pulse-irradiated undoped C60 powder studied with the Time-Resolved Microwave conductivity technique

1997 ◽  
Vol 86 (1-3) ◽  
pp. 2355-2356 ◽  
Author(s):  
R.J.O.M. Hoffman ◽  
G.P. van der Laan ◽  
M.P. de Haas ◽  
K. Tanigaki
Keyword(s):  
Charge Migration ◽  
Microwave Conductivity ◽  
Time Resolved
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